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參數(shù)資料
| 型號(hào)： | 2SC5009 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN Silicon Epitaxial Transistor(NPN硅外延晶體管) |
| 中文描述： | NPN硅外延晶體管（npn型硅外延晶體管） |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 49K |
| 代理商： | 2SC5009 |
1993
DATA SHEET
SILICON TRANSISTOR
2SC5009
Document No. P10388EJ2V0DS00 (2nd edition)
(Previous No. TD-2430)
Date Published July 1995 P
Printed in Japan
NPN SILICON EPITAXIAL TRANSISTOR
3 PINS ULTRA SUPER MINI MOLD
DESCRIPTION
The 2SC5009 is an NPN epitaxial silicon transistor designed for use
in low noise and small signal amplifiers from VHF band to L band. Low
noise figure, high gain, and high current capability achieve a very wide
dynamic range and excellent linearity. This is achieved by direct nitride
passivated base surface process (NEST3 process) which is an NEC
proprietary new fabrication technique.
FEATURES
Low Voltage Use.
High f
T
Low C
re
Low NF
High |S
21e
|
2
: 8.5 dB TYP. (@ V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz)
Ultra Super Mini Mold Package.
: 12.0 GHz TYP. (@ V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz)
: 0.3 pF TYP. (@ V
CE
= 3 V, I
E
= 0, f = 1 MHz)
: 2.5 dB TYP. (@ V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz)
ORDERING INFORMATION
PART
NUMBER
QUANTITY
PACKING STYLE
2SC5009
50 pcs./Unit
2SC5009-T1
3 kpcs./Reel
*
Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
9
6
2
V
V
V
10
60
150
mA
mW
C
C
–65 to +150
Embossed tape 8 mm wide.
Pin 3 (Collector) face to perforation side
of the tape.
PACKAGE DIMENSIONS
in milimeters
1.6±0.1
0.8±0.1
1
1
1
+
–
+
–
2
3
0
0
0
+
–
1. Emitter
2. Base
3. Collector
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5010 | NPN Silicon Epitaxial Transistor(NPN硅外延晶體管) |
| 2SC5012 | High Frequency Low Noise Amplifier NPN Silicon Transistor(高頻低噪聲放大器NPN晶體管) |
| 2SC5013-T1 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
| 2SC5013 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
| 2SC5013-T2 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5009-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD |
| 2SC5010 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD |
| 2SC5010(NE68519) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC5010-A | 功能描述:RF TRANSISTOR NPN SOT-523 制造商:cel 系列:- 包裝:剪帶 零件狀態(tài):有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:6V 頻率 - 躍遷:12GHz 噪聲系數(shù)（dB，不同 f 時(shí)的典型值）:1.5dB @ 2GHz 增益:8.5dB 功率 - 最大值:125mW 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:75 @ 10mA，3V 電流 - 集電極（Ic）（最大值）:30mA 安裝類型:表面貼裝 封裝/外殼:SOT-523 供應(yīng)商器件封裝:- 標(biāo)準(zhǔn)包裝:1 |
| 2SC5010-T1 | 制造商:NEC Electronics Corporation 功能描述:2SC5010-T1 |
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