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參數(shù)資料
| 型號(hào)： | 2SC4998 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | High-Voltage Switching Transistor(高電壓開關(guān)晶體管) |
| 中文描述： | 高壓開關(guān)晶體管（高電壓開關(guān)晶體管） |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 51K |
| 代理商： | 2SC4998 |
2SC4997 / 2SC4998
Transistors
High-frequency Amplifier Transistor,
RF switching (10V, 0.1A)
2SC4997 / 2SC4998
!
Features
1) High transition frequency. (f
T
=240MHz)
2) High h
FE
.
!
Absolute maximum ratings
(Ta=25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
15
10
5
0.1
0.15
0.2
150
55~
+
150
Unit
V
V
V
A
2SC4998
2SC4997
W
C
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
!
Packaging specifications and h
FE
Type
Package
h
FE
Marking
Code
2SC4997
EMT3
560~2700
CB
TL
3000
2SC4998
UMT3
560~2700
CB
T106
3000
Basic ordering unit (pieces)
!
External dimensions
(Units : mm)
2SC4997
ROHM : EMT3
EIAJ : SC-75A
(3) Collector(Drain)
(1) Emitter(Source)
0
0
0.1Min.
0
0
0
1.6
1
1
0
0.8
(2)
0
(3)
0
(1)
2SC4998
ROHM : UMT3
EIAJ : SC-70
(3) Collector(Drain)
(1) Emitter(Source)
Each lead has same dimensions
1.25
2.1
0
0
0
0.1to0.4
(
0
0
0
0
(
2
1
(
0
!
Electrical characteristics
(Ta=25
°
C)
Transition frequency
Output capacitance
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
Min.
10
15
5
-
-
-
Typ.
-
-
-
-
-
-
Max.
-
-
-
0.1
0.1
0.15
Unit
V
V
V
μ
A
μ
A
V
Conditions
h
FE
f
T
Cob
560
-
-
1600
240
1.4
2700
-
3
-
MHz
pF
I
C
=
1mA
I
C
=
10
μ
A
I
E
=
10
μ
A
V
CB
=
12V
V
EB
=
4V
I
C
/I
B
=
10mA/1mA
V
CE
=
2V, I
C
5mA
V
CE
=
5V, I
E
=
10mA, f
=
200MHz
V
CB
=
10V, I
E
=
0A, f
=
1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
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