參數(shù)資料
型號: 2SC4954
元件分類: 小信號晶體管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
文件頁數(shù): 5/6頁
文件大?。?/td> 41K
代理商: 2SC4954
5
2SC4954
S-PARAMETER
(VCE = 3 V, IC = 5 mA, ZO = 50
)
fS11
S21
S12
S22
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.200
.775
–19.9
10.233
153.0
.029
78.0
.931
–14.1
0.400
.653
–32.4
8.408
133.2
.056
66.1
.815
–23.3
0.600
.527
–39.8
6.761
119.0
.073
70.0
.717
–27.3
0.800
.447
–45.7
5.598
108.5
.088
67.6
.639
–30.3
1.000
.359
–49.6
4.670
100.0
.111
66.9
.595
–31.2
1.200
.314
–50.3
4.118
92.7
.123
67.5
.565
–32.4
1.400
.279
–48.1
3.630
87.1
.140
66.8
.545
–34.4
1.600
.246
–46.9
3.246
82.1
.154
64.1
.519
–35.9
1.800
.219
–46.8
2.885
78.1
.178
62.0
.521
–37.0
2.000
.178
–43.6
2.747
73.7
.194
62.9
.500
–38.9
2.200
.165
–44.7
2.581
68.8
.201
62.0
.478
–43.1
2.400
.149
–37.6
2.382
64.8
.224
60.1
.455
–43.1
2.600
.137
–50.0
2.244
61.4
.241
60.9
.471
–43.9
2.800
.132
–47.6
2.138
59.0
.253
57.7
.449
–47.9
3.000
.103
–33.7
2.044
55.3
.265
55.3
.438
–47.0
相關(guān)PDF資料
PDF描述
2SC4956-T2T82 L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC4957 L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC4959-T2T83-A L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC4959-T1T83-A L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC4959-T2T83-A L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC4957-A 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT NPN 6V 0.03A 4-Pin Mini-Mold
2SC4957-T1 制造商:NEC Electronics Corporation 功能描述:
2SC4957-T1-A 功能描述:RF TRANSISTOR NPN SOT-143 制造商:cel 系列:- 包裝:帶卷(TR) 零件狀態(tài):有效 晶體管類型:NPN 電壓 - 集射極擊穿(最大值):6V 頻率 - 躍遷:12GHz 噪聲系數(shù)(dB,不同 f 時(shí)的典型值):1.5dB @ 2GHz 增益:11dB 功率 - 最大值:180mW 不同?Ic,Vce?時(shí)的 DC 電流增益(hFE)(最小值):75 @ 10mA,3V 電流 - 集電極(Ic)(最大值):30mA 安裝類型:表面貼裝 封裝/外殼:TO-253-4,TO-253AA 供應(yīng)商器件封裝:SOT-143 標(biāo)準(zhǔn)包裝:3,000
2SC4959-T1 制造商:NEC Electronics Corporation 功能描述:
2SC4960 功能描述:TRANS NPN 800VCEO 1A TOP-3F RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發(fā)射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR