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參數(shù)資料
| 型號： | 2SC4897 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Triple Diffused |
| 中文描述： | 硅npn型三重擴散 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 21K |
| 代理商： | 2SC4897 |
Electrical Characteristics
(Ta = 25°C)
Item
———————————————————————————————————————————
Collector to emitter breakdown
V
(BR)CEO
800
voltage
———————————————————————————————————————————
Emitter to base breakdown
V
(BR)EBO
6
voltage
———————————————————————————————————————————
Collector cutoff current
I
CES
—
Symbol
Min
Typ
Max
Unit
Test Conditions
—
—
V
I
C
= 10 mA,
R
BE
=
∞
—
—
V
I
E
= 10 mA, I
C
= 0
—
500
μA
V
CE
= 1500 V,
R
BE
= 0
———————————————————————————————————————————
DC current transfer ratio
h
FE
—
—
38
—
V
CE
= 5 V,
I
C
= 1 A
———————————————————————————————————————————
Collector to emitter saturation
V
CE(sat)
—
voltage
———————————————————————————————————————————
Base to emitter saturation
V
BE(sat)
—
voltage
———————————————————————————————————————————
Fall time
t
f
—
—
5
V
I
C
= 14 A, I
B
= 3.5 A
—
1.5
V
I
C
= 14 A, I
B
= 3.5 A
—
0.5
μs
I
CP
= 10 A, I
B1
= 2 A
I
B2
≈
–3A, f
H
= 31.5 kHz
———————————————————————————————————————————
Maximum Collector Power Dissipation Curve
200
150
100
50
0
C
50
100
150
200
Case Temperature Tc (°C)
Area of Safe Operation
40
30
20
10
0
C
500
1000
1500
2000
Collector to Emitter Voltage V (V)
C
(100V, 25A)
(800V, 4A)
0.5 mA
2SC4897
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