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參數(shù)資料
| 型號： | 2SC4884E |
| 英文描述： | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | SC-71 |
| 中文描述： | 晶體管|晶體管|叩| 300V五（巴西）總裁| 100mA的一（c）|律師- 71 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 280K |
| 代理商： | 2SC4884E |
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol Rating Unit
————————————————————–
Collector to base voltage
VCBO
300
V
————————————————————–
Collector to emitter voltage
VCEO
300
V
————————————————————–
Emitter to base voltage
VEBO
5V
————————————————————–
Collector current
IC
100
mA
————————————————————–
Collector power dissipation
PC
1.5
W
——————–
PC*1
8
————————————————————–
Junction temperature
Tj
150
°C
————————————————————–
Storage temperature
Tstg
–55 to °C
+150
————————————————————–
Note: 1. Value at TC = 25°C.
1
2
3
TO-126FM
1. Emitter
2. Collector
3. Base
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test condition
———————————————————————————————————————————
Collector to base breakdown voltage
V(BR)CBO 300
—
V
IC = 10 A, IE = 0
———————————————————————————————————————————
Collector to emitter breakdown voltage
V(BR)CEO 300
—
V
IC = 1 mA, RBE = ∞
———————————————————————————————————————————
Emitter to base breakdown voltage
V(BR)EBO 5—
V
IE = 10 A, IC = 0
———————————————————————————————————————————
Collector cutoff current
ICEO
—
1.0
A
VCE = 250 V, RBE = ∞
———————————————————————————————————————————
DC current transfer ratio
hFE
40
—
200
VCE = 20 V, IC = 20 mA
———————————————————————————————————————————
Base to emitter voltage
VBE
—
1.0
V
VCE = 20 V, IC = 20 mA
———————————————————————————————————————————
Collector to emitter saturation voltage
VCE(sat)
—
1.5
V
IC = 20 mA, IB = 2 mA
———————————————————————————————————————————
Gain bandwidth product
fT
50
80
—
MHz
VCE = 20 V, IC = 20 mA
———————————————————————————————————————————
Collector Output Capacitance
Cob
—
4.0
pF
VCB = 20 V, IE = 0,
f = 1 MHz
———————————————————————————————————————————
2SC4828
Silicon NPN Triple Diffused
High Voltage Amplifier, TV Video Output
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