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參數(shù)資料
| 型號(hào)： | 2SC4783 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR |
| 中文描述： | NPN硅外延晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 37K |
| 代理商： | 2SC4783 |
2001
NPN SILICON EPITAXIAL TRANSISTOR
2SC4783
NPN SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No.
Date Published
Printed in Japan
D15616EJ1V0DS00 (1st edition)
July 2001 NS CP(K)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SC4783 is NPN silicon epitaxial transistor.
FEATURES
High DC current gain: h
FE2
= 200 TYP.
High voltage: V
CEO
= 50 V
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Collector to Base Voltage
V
CBO
60
V
Collector to Emitter Voltage
V
CEO
50
V
Emitter to Base Voltage
V
EBO
5.0
V
Collector Current (DC)
Collector Current (pulse)
Note1
Total Power Dissipation (T
A
= 25°C)
Note2
I
C(DC)
100
mA
I
C(pulse)
200
mA
P
T
200
mW
Junction Temperature
T
j
150
°C
Storage Temperature Range
T
stg
–55 to + 150
°C
Notes 1.
PW
≤
10 ms, Duty Cycle
≤
50%
2.
When mounted on ceramic substrate of 3.0 cm
2
x 0.64 mm
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
= 60 V, I
E
= 0
100
nA
Emitter Cut-off Current
I
EBO
V
EB
= 5.0 V, I
C
= 0
100
nA
DC Current Gain
Note
h
FE1
V
CE
= 6.0 V, I
C
= 0.1 mA
50
h
FE2
V
CE
= 6.0 V, I
C
= 1.0 mA
90
200
600
Base to Emitter Voltage
Note
Collector Saturation Voltage
Note
Base Saturation Voltage
Note
V
BE
V
CE
= 6.0 V, I
C
= 1.0 mA
0.62
V
V
CE(sat)
I
C
= 100 mA, I
B
= 10 mA
0.15
0.3
V
V
BE(sat)
I
C
= 100 mA, I
B
= 10 mA
0.86
1.0
V
Gain Bandwidth Product
f
T
V
CE
= 6.0 V, I
E
=
10 mA
150
250
MHz
Output Capacitance
C
ob
V
CE
= 6.0 V, I
E
= 0, f = 1.0 MHz
3.0
4.0
pF
Note
Pulsed: PW
≤
350
μ
s, Duty Cycle
≤
2%
h
FE
CLASSFICATION
Marking
L4
L5
L6
L7
h
FE2
90 to 180
135 to 270
200 to 400
300 to 600
PACKAGE DRAWING (Unit: mm)
0.3 ± 0.05
1
0
2
0.2
+0.1
–0
0.5
1: Emitter
2: Base
3: Collector
0.5
1.0
1.6 ± 0.1
3
1
0.6
0.75 ± 0.05
0 to 0.1
0.1
+0.1
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PDF描述 |
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| 2SC4784 | Silicon NPN Bipolar Transistor(外延NPN晶體管) |
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| 2SC4791 | Silicon NPN Epitaxial |
| 2SC4796 | Silicon NPN Triple Diffused |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4783-T1-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN Transistor,50V,0.1A,USM3 制造商:Renesas 功能描述:Trans GP BJT NPN 50V 0.1A 3-Pin SC-75 T/R |
| 2SC4783-T1-A(L6) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SC4783-T1-A-L7 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC4784YA(TL) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC4784YA-TR-E | 制造商:Renesas Electronics Corporation 功能描述: |
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