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參數(shù)資料
| 型號： | 2SC4782Q |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | SC-59, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 173K |
| 代理商： | 2SC4782Q |
No. 5339-2/8
LB1846M, 1848M
Parameter
Symbol
Conditions
Ratings
Unit
Supply voltage
VCC
2.5 to 7.5
V
Input high-level voltage
VIH
2.0 to 7.5
V
Input low-level voltage
VIL
–0.3 to +0.7
V
Allowable Operating Ranges at Ta = 25°C
Parameter
Symbol
Conditions
Ratings
Unit
Maximum supply voltage
VCC max
–0.3 to +8.0
V
Output voltage
VOUT
VCC + VSF
V
Input voltage
VIN
–0.3 to +8.0
V
Ground pin outflow current
IGND
Per channel
800
mA
Allowable power dissipation
Pd max1
Independent IC
350
mW
Pd max2
When mounted*
870
mW
Operating temperature
Topr
–20 to +75
°C
Storage temperature
Tstg
–40 to +150
°C
Specifications
Absolute Maximum Ratings at Ta = 25°C
Note: *On the specified circuit board (a 114.3
× 76.2 × 1.5-mm3 glass-epoxy printed circuit board)
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
[LB1846M]
Current drain
ICC0
IN1, 2, 3, 4 = 0 V
0.1
10
A
ICC1
IN1, 3 = 3 V, IN2, 4 = 0 V
30
40
mA
VOUT1
VIN = 3 V or 0 V, VCC = 3 to 7.5 V,
0.27
0.4
V
Output saturation voltage
IOUT = 200 mA
VOUT2
VIN = 3 V or 0 V, VCC = 4 to 7.5 V,
0.55
0.8
V
IOUT = 400 mA
Input current
IIN
VIN = 5 V
150
200
A
[Spark Killer Diode]
Reverse current
IS(leak)
30
A
Forward voltage
VSF
IOUT = 400 mA
1.7
V
[LB1848M]
Current drain
ICC0
ENA = 0 V, VIN = 3 V or 0 V
0.1
10
A
ICC1
ENA = 3 V, VIN = 3 V or 0 V
25
35
mA
VOUT1
ENA = 3 V, VIN = 3 V or 0 V,
0.27
0.4
V
Output saturation voltage
VCC = 3 to 7.5 V, IOUT = 200 mA
VOUT2
ENA = 3 V, VIN = 3 V or 0 V,
0.55
0.8
V
VCC = 4 to 7.5 V, IOUT = 400 mA
Input current 1
IIN
VIN = 5 V
75
100
A
Input current 2
IENA
ENA = 5 V
85
110
A
[Spark Killer Diode]
Reverse current
IS(leak)
30
A
Forward voltage
VSF
IOUT = 400 mA
1.7
V
Electrical Characteristics at Ta = 25°C, VCC = 5.0 V
Note: The thermal shutdown circuit function values are design guarantees, and are not tested.
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