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參數(shù)資料
| 型號(hào)： | 2SC4754 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | 2-10S1A, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 166K |
| 代理商： | 2SC4754 |
2SC4754
2004-07-26
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC4754
High-Voltage Switching Applications
High-Speed DC-DC Converter and Switching Regulator
Applications
Excellent switching times: tr = 1.0 s (max)
tf = 1.0 s (max), (IC = 0.8 A)
High breakdown voltage: VCEO = 400 V
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
600
V
Collector-emitter voltage
VCEO
400
V
Emitter-base voltage
VEBO
7
V
Collector current
IC
2
A
Base current
IB
0.5
A
Ta = 25°C
1.5
Collector power
dissipation
Tc = 25°C
PC
20
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 600 V, IE = 0
―
100
A
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
―
1
mA
Collector-base breakdown voltage
V (BR) CBO
IC = 1 mA, IE = 0
600
―
V
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
400
―
V
hFE(1)
VCE = 5 V, IC = 0.1 A
20
―
DC current gain
hFE(2)
VCE = 5 V, IC = 1 A
8
―
Collector-emitter saturation voltage
VCE (sat)
IC = 1 A, IB = 0.2 A
―
1.0
V
Base-emitter saturation voltage
VBE (sat)
IC = 1 A, IB = 0.2 A
―
1.5
V
Rise time
tr
―
1.0
Storage time
tstg
―
2.5
Switching time
Fall time
tf
IB1 = IB2 = 0.08 A, duty cycle ≤ 1%
―
1.0
s
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10S1A
Weight: 1.5 g (typ.)
I B1
20 s
VCC ≈ 200 V
I B2
Output
250
IB2
IB1
Input
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4754(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC4774 T106S | 制造商:ROHM Semiconductor 功能描述: |
| 2SC4774T106 | 制造商:ROHM Semiconductor 功能描述: |
| 2SC4774T106R | 制造商:ROHM Semiconductor 功能描述:TRANSISTOR 2SC4774T106R |
| 2SC4774T106S | 功能描述:兩極晶體管 - BJT NPN 6V 50MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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