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參數(shù)資料
| 型號： | 2SC4745 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Triple Diffused(三倍擴散NPN晶體管) |
| 中文描述： | 硅npn型三重擴散（三倍擴散npn型晶體管） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 31K |
| 代理商： | 2SC4745 |
2SC4745
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
I
C(surge)
P
C
*
Tj
1500
V
Collector to emitter voltage
800
V
Emitter to base voltage
6
V
Collector current
6
A
Collector peak current
7
A
Collector surge current
16
A
Collector power dissipation
1
50
W
Junction temperature
150
°C
Storage temperature
Note:
1. Value at T
C
= 25°C.
Tstg
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
800
—
—
V
I
C
= 10 mA, R
BE
= _
Emitter to base breakdown
voltage
V
(BR)EBO
6
—
—
V
I
E
= 10 mA, I
C
= 0
Collector cutoff current
I
CES
h
FE
V
CE(sat)
—
—
500
μA
V
CE
= 1500 V, R
BE
= 0
V
CE
= 5 V, I
C
= 1 A
I
C
= 5 A, I
B
= 1 A
DC current transfer ratio
7
—
30
Collector to emitter saturation
voltage
—
—
5
V
Base to emitter saturation
voltage
V
BE(sat)
—
—
1.5
V
I
C
= 5 A, I
B
= 1 A
Fall time
t
f
—
0.2
0.4
μs
I
CP
= 5 A, I
B1
= 1 A, f
H
= 64 kHz
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