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參數(shù)資料
| 型號： | 2SC4744 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Triple Diffused(三倍擴(kuò)散NPN晶體管) |
| 中文描述： | 硅npn型三重?cái)U(kuò)散（三倍擴(kuò)散npn型晶體管） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 31K |
| 代理商： | 2SC4744 |
2SC4744
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to emitter voltage
V
CES
V
EBO
I
C
I
C(peak)
I
C(surge)
P
C
*
Tj
1500
V
Emitter to base voltage
6
V
Collector current
6
A
Collector peak current
7
A
Collector surge current
16
A
Collector power dissipation
1
50
W
Junction temperature
150
°C
Storage temperature
Tstg
–55 to +150
°C
C to E diode forward current
Note:
1. Value at T
C
= 25°C.
I
D
7
A
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Emitter to base breakdown
voltage
V
(BR)EBO
6
—
—
V
I
E
= 400 mA, I
C
= 0
Collector cutoff current
I
CES
h
FE
V
CE(sat)
—
—
500
μA
V
CE
= 1500 V, R
BE
= 0
V
CE
= 5 V, I
C
= 1 A
I
C
= 5 A, I
B
= 1.25 A
DC current transfer ratio
—
—
25
Collector to emitter saturation
voltage
—
—
2.0
V
Base to emitter saturation
voltage
V
BE(sat)
—
—
1.5
V
I
C
= 5 A, I
B
= 1.25 A
C to E diode forward voltage
V
ECF
t
f
—
—
2.0
V
I
F
= 6 A
I
CP
= 5 A, I
B1
= 1 A, I
B2
= –2 A
Fall time
—
—
0.4
μs
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