- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄49955 > 2SC4738F 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SC4738F |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ESM, 2-2HA1A, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 411K |
| 代理商： | 2SC4738F |
2SC4738F
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4738F
Audio Frequency General Purpose Amplifier Applications
High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
High hFE: hFE = 120~400
Complementary to 2SA1832F
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
30
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 60 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
DC current gain
hFE
(Note)
VCE = 6 V, IB = 2 mA
120
400
Collector-emitter saturation voltage
VCE (sat)
IC = 100 mA, IB = 10 mA
0.1
0.25
V
Transition frequency
fT
VCE = 10 V, IC = 1 mA
80
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
2.0
3.5
pF
Note: hFE classification Y (Y): 120~240, GR (G): 200~400
( ) marking symbol
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2HA1A
Weight: 2.3 mg (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC4745 | 6 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 2SC4754 | 2 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 2SC4764 | 6 A, 600 V, NPN, Si, POWER TRANSISTOR |
| 2SC4765 | 5 A, 600 V, NPN, Si, POWER TRANSISTOR |
| 2SC4774T106S | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4738F-GR(T5L,F) | 制造商:Toshiba 功能描述:NPN 制造商:Toshiba 功能描述:NPN Cut Tape |
| 2SC4738FT-GR(T5L,F | 制造商:Toshiba 功能描述:NPN |
| 2SC4738F-Y(TE85L,F | 制造商:Toshiba 功能描述:NPN |
| 2SC4738-GR | 制造商:Toshiba America Electronic Components 功能描述:Bipolar Junction Transistor, NPN Type, SOT-523 |
| 2SC4738-GR(T5L,F,T | 制造商:Toshiba America Electronic Components 功能描述:TRAN NPN 50V 0.15A SSM 制造商:Toshiba America Electronic Components 功能描述:Transistors Bipolar - BJT Transistor, NPN, PB 50V, 0.15A, SSM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。