參數(shù)資料
型號： 2SC4704
廠商： Hitachi,Ltd.
英文描述： Silicon NPN Epitaxial(外延NPN晶體管)
中文描述： npn型硅外延（外延npn型晶體管）
文件頁數(shù)： 2/5頁
文件大?。?/td> 33K
代理商： 2SC4704
2SC4704
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
C (peak)
P
C
P
C
*
Tj
200
V
Collector to emitter voltage
200
V
Emitter to base voltage
4
V
Collector current
0.2
A
Collector peak current
0.5
A
Collector power dissipation
1.25
W
1
10
Junction temperature
150
°C
Storage temperature
Note:
1. Value at T
C
= 25°C.
Tstg
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
200
—
—
V
I
C
= 10 μA, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
200
—
—
V
I
C
= 1 mA, R
BE
= _
Emitter to base breakdown
voltage
V
(BR)EBO
4
—
—
V
I
E
= 10 μA, I
C
= 0
Collector cutoff current
I
CBO
h
FE
*
V
BE
V
CE (sat)
—
—
10
μA
V
CB
= 160 V, I
E
= 0
V
CE
= 5 V, I
C
= 10 mA
V
CE
= 5 V, I
C
= 30 mA
I
C
= 30 mA, I
B
= 3 mA
DC current transfer ratio
1
60
—
200
Base to emitter voltage
—
—
1.0
V
Collector to emitter saturation
voltage
—
—
1.0
V
Gain bandwidth product
f
T
Cob
200
300
—
MHz
V
CE
= 20 V, I
C
= 30 mA
V
CB
= 30 V, I
E
= 0, f = 1 MHz
Collector output capacitance
Note:
1. The 2SC4704 is grouped by h
FE
and its specification is as follows.
—
5.0
—
pF
B
C
60 to 120
100 to 120
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PDF描述
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