參數(shù)資料
型號(hào)： 2SC4627J
廠商： PANASONIC CORP
元件分類： 小信號(hào)晶體管
英文描述： For High-Frequency Amplification
中文描述： HF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝： ROHS COMPLIANT, SSMINI3-F1, SC-89, 3 PIN
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 65K
代理商： 2SC4627J
1
Transistors
2SC4627J
Silicon NPN epitaxial planar type
Publication date: March 2003
SJC00163
A
ED
For high-frequency amplification
■
Features
Optimum for RF amplification of FM/AM radios
High transition frequency f
T
SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
30
V
Collector-emitter voltage (Base open)
V
CEO
20
V
Emitter-base voltage (Collector open)
V
EBO
I
C
3
V
Collector current
15
mA
Collector power dissipation
P
C
125
mW
Junction temperature
T
j
T
stg
125
°
C
°
C
Storage temperature
55 to
+
125
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
6 V, I
E
=
1 mA
V
CB
=
6 V, I
E
=
1 mA
V
CB
=
6 V, I
E
=
1 mA, f
=
200 MHz
V
CB
=
6 V, I
E
=
1 mA, f
=
10.7 MHz
30
V
Emitter-base voltage (Collector open)
V
EBO
V
BE
3
V
Base-emitter voltage
720
mV
Forward current transfer ratio
*
h
FE
65
160
Transition frequency
f
T
C
re
450
650
MHz
Reverse transfer capacitance
(Common emitter)
0.8
1.0
pF
Power gain
G
P
V
CB
=
6 V, I
E
=
1 mA, f
=
100 MHz
V
CB
=
6 V, I
E
=
1 mA, f
=
100 MHz
24
dB
Noise figure
NF
3.3
dB
Unit: mm
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Rank
C
h
FE
65 to 160
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
0.27
±
0.02
3
1
2
0.12
+0.03
0
±
0
(
0
1
±
0
0
0
0
+
–
(
5
5
1.60
+0.05
1.00
±
0.05
(0.50)(0.50)
+
–
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Marking Symbol: U
相關(guān)PDF資料
PDF描述
2SC4627 Silicon NPN epitaxial planer type(For high-frequency amplification)
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