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| 型號(hào)： | 2SC4536-T1QR-A |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, POWER, MINIMOLD PACKAGE-3 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 47K |
| 代理商： | 2SC4536-T1QR-A |
Data Sheet PU10338EJ01V0DS
4
2SC4536
5
1
2
3
4
0
5
10
20
50
100
200
Collector Current IC (mA)
NOISE FIGURE vs.
COLLECTOR CURRENT
Noise
Figure
NF
(dB)
VCE = 10 V
f = 1 GHz
70
80
60
50
40
30
10
30
50
100
300
Collector Current IC (mA)
IM3, IM2+, IM2– vs.
COLLECTOR CURRENT
3rd
Order
Intermodulation
Distortion
IM
3(dBc)
2nd
Order
Intermodulation
Distortion
(+)
IM
2+
(dBc)
2nd
Order
Intermodulation
Distortion
(–)
IM
2–
(dBc)
IM2–
IM2+
IM3
VCE = 10 V
IM3 :VO = 110 dB V/75
2 tone each
f = 2 × 190 – 200 MHz
IM2+ :VO = 105 dB V/75
2 tone each
f = 90 + 100 MHz
IM2– :VO = 105 dB V/75
2 tone each
f = 190 – 90 MHz
VCE = 10 V
f = 1 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAXIMUM POWER
GAIN, MAG vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Power
Gain
G
max
(u)
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
10
2
4
6
8
0
10
100
30
50
300
MAG
Gmax (u)
|S21e|
2
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave]
→ [Device Parameters]
URL http://www.csd-nec.com/
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| 2SC4536-QR-A | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4536-QR-A | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4536-T1QR-A | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4536-T1QS-A | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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