參數(shù)資料
型號(hào): 2SC4536-QR-A
元件分類: 小信號(hào)晶體管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, POWER, MINIMOLD PACKAGE-3
文件頁(yè)數(shù): 3/7頁(yè)
文件大?。?/td> 47K
代理商: 2SC4536-QR-A
Data Sheet PU10338EJ01V0DS
3
2SC4536
TYPICAL CHARACTERISTICS (TA = +25
°°°°C)
Collector
Current
I
C
(mA)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
80
100
20
40
60
0
10
20
IB = 0.6 mA
0.5 mA
0.4 mA
0.3 mA
0.2 mA
0.1 mA
VCE = 10 V
IC = 50 mA
Frequency f (GHz)
INSERTION POWER GAIN, MAXIMUM
POWER GAIN, MAG vs. FREQUENCY
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Power
Gain
G
max
(u)
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
20
10
0
0.1
0.2
0.3
0.5
1
2
3
MAG
Gmax (u)
|S21e|
2
f = 1 MHz
IE = 0 mA
Reverse
Transfer
Capacitance
C
re
(pF)
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
5
2
0.2
1
0.5
1
5
10
30
Gain
Bandwidth
Product
f
T
(GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
2
5
0.2
0.5
1
100
300
10
550
30
VCE = 10 V
DC
Current
Gain
h
FE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
300
100
50
30
10
100
0.1
1
10
1 000
500
400
1 000
1 500
2 000
2 500
0
25
50
75
100
125
150
Total
Power
Dissipation
P
tot
(mW)
Ambient Temperature TA (C)
vs. AMBIENT TEMPERATURE
TOTAL POWER DISSIPATION
Ceramic Substrate
16 cm2
× 0.7 mm (t)
Rth (j-a) 62.5C/W
Free Air
Rth (j-a) 312.5C/W
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