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參數(shù)資料
| 型號(hào)： | 2SC4460M-SV |
| 元件分類： | 功率晶體管 |
| 英文描述： | 15 A, 500 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-3PML, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 51K |
| 代理商： | 2SC4460M-SV |
2SC4460M-SV
No.7692-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
DC Current Gain
hFE1VCE=5V, IC=1.2A
20
40
hFE2VCE=5V, IC=6A
8
Gain-Bandwidth Product
fT
VCE=10V, IC=1.2A
18
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
160
pF
Collectoe-to-Emitter Saturation Voltage
VCE(sat)
IC=6A, IB=1.2A
1
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=6A, IB=1.2A
1.5
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=1mA, IE=0A
1000
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=5mA, RBE=∞
500
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=1mA, IC=0A
7
V
Collector-to-Emitter Sustain Voltage
VCEX(sus)
IC=5A, IB1=--IB2=2A, L=500H, clamped
500
V
Turn-On Time
ton
VCC=200V, 5IB1=--2.5IB2=IC=7A, RL=28.6
0.5
s
Storage Time
tstg
VCC=200V, 5IB1=--2.5IB2=IC=7A, RL=28.6
3.0
s
Fall Time
tf
VCC=200V, 5IB1=--2.5IB2=IC=7A, RL=28.6
0.3
s
Package Dimensions
Switching Time Test Circuit
unit : mm (typ)
7505-002
VR
RB
VCC=200V
VBE= --5V
+
50
INPUT
OUTPUT
RL
28.6
100F
470F
PW=20s
IB1
D.C.≤1%
IB2
16.0
5.6
3.1
2.0
12
3
2.8
2.0
5.45
22.0
20.4
1.0
0.6
4.0
21.0
5.0
8.0
3.5
3.4
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PML
ITR07048
4
6
12
10
8
2
0
024
8
10
6
ITR07047
IB=0mA
4
16
14
12
10
8
6
2
0
0.2
0.6
0.4
0.8
1.0
1.2
VCE=5V
300mA
200mA
100mA
50mA
600mA
400mA
500mA
800mA
20mA
1.2A
1.4A
1.0A
Ta=120
°C
25
°C
--40
°C
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector
Current,
I
C
-
A
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector
Current,
I
C
-
A
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