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參數(shù)資料
| 型號(hào)： | 2SC4414 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | NPN Epitaxial Planar Silicon Transistors for Low-Frequency General-Purpose Amplifier,Low-Frequency Power Amplifier Applications(用于低頻通用放大器，低頻功率放大器應(yīng)用的NPN硅外延平面型晶體管) |
| 中文描述： | 瑞展硅晶體管的低頻率通用放大器，低頻功率放大器應(yīng)用（用于低頻通用放大器，低頻功率放大器應(yīng)用的npn型硅外延平面型晶體管） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 137K |
| 代理商： | 2SC4414 |
82098HA (KT)/5189MO, TS No.3012-1/4
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1683/2SC4414
Low-Frequency General-Purpose Amplifier,
Low-Frequency Power Amplifier Applications
Ordering number:EN3012
( ) : 2SA1683
Specifications
Absolute Maximum Ratings
at Ta = 25C
Electrical Characteristics
at Ta = 25C
Package Dimensions
unit:mm
2033
[2SA1683/2SC4414]
Features
· Adoption of FBET process.
· High breakdown voltage : V
CEO
>80V.
B : Base
C : Collector
E : Emitter
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