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參數(shù)資料
| 型號： | 2SC4410 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN epitaxial planer type(For UHF amplification) |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SMINI3-G1, SC-70, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 37K |
| 代理商： | 2SC4410 |
1
Transistor
2SC4410
Silicon NPN epitaxial planer type
For UHF amplification
I
Features
G
Allowing the small current and low voltage operation.
G
High transition frequency f
T
.
G
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
2.1
±
0.1
1
±
0
0
±
0
0
±
0
0
+
–
0
+
–
2
±
0
1.25
±
0.1
0.425
0.425
1
3
2
0
0
0
0
0.2
±
0.1
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
10
7
2
10
50
150
–55 ~ +150
Unit
V
V
V
mA
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Maximum unilateral power gain
Noise figure
Symbol
I
CBO
I
EBO
h
FE
f
T
C
ob
| S
21e
|
2
GUM
NF
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 1.5V, I
C
= 0
V
CE
= 1V, I
C
= 1mA
V
CE
= 1V, I
C
= 1mA, f = 800MHz
V
CB
= 1V, I
E
= 0, f = 1MHz
V
CE
= 1V, I
C
= 1mA, f = 800MHz
V
CE
= 1V, I
C
= 1mA, f = 800MHz
V
CE
= 1V, I
C
= 1mA, f = 800MHz
min
50
typ
4
0.4
6.0
15
3.5
max
1
1
200
Unit
μ
A
μ
A
GHz
pF
dB
dB
dB
Note: Handle the product with care because this is sensitive to the electrostatic breakdown by its structure.
Marking symbol :
2X
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