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參數(shù)資料
| 型號： | 2SC4351K |
| 廠商： | NEC Corp. |
| 英文描述： | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 中文描述： | 晶體管|晶體管|達(dá)林頓|叩| 60V的五（巴西）總裁| 5A條一（c）|的SOT - 186VAR |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 110K |
| 代理商： | 2SC4351K |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
Document No. D15594EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
DARLINGTON POWER TRANSISTOR
2SC4351
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR HIGH-SPEED SWITCHING
DATA SHEET
The 2SC4351 is a high-speed Darlington power transistor. This
transistor is ideal for high-precision control such as PWM control for
pulse motors or blushless motor of OA and FA equipment.
FEATURES
Mold package that does not require an insulating board or
insulation bushing
On-chip C to B constant voltage diode for surge voltage
absorption
On-chip C to E reverse diode
Fast switching speed
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
60
±
10
V
Collector to emitter voltage
V
CEO
60
±
10
V
Emitter to base voltage
V
EBO
8.0
V
Collector current (DC)
I
C(DC)
±
5.0
A
Collector current (pulse)
I
C(pulse)
*
±
10
A
Base current (DC)
I
B(DC)
0.5
A
Total power dissipation
P
T
(Tc = 25
°
C)
20
W
Total power dissipation
P
T
(Ta = 25
°
C)
2.0
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
* PW
≤
10 ms, duty cycle
≤
50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
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