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參數(shù)資料
| 型號(hào)： | 2SC4259 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 16K |
| 代理商： | 2SC4259 |
2SC4259
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
30
V
Collector to emitter voltage
V
CEO
25
V
Emitter to base voltage
V
EBO
3
V
Collector current
I
C
20
mA
Collector power dissipation
P
C
100
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
—
V
I
C = 10 A, IE = 0
Collector cutoff current
I
CBO
—
0.3
A
V
CB = 15 V, IE = 0
I
CEO
—
10
A
V
CE = 25 V, RBE = ∞
Emitter cutoff current
I
EBO
—
1.0
A
V
EB = 3 V, IC = 0
Collector to emitter saturation
voltage
V
CE(sat)
—
5.0
V
I
C = 10 mA, IB = 1 mA
DC current transfer ratio
h
FE
50
—
180
V
CE = 5 V, IC = 2 mA
Collector output capacitance
Cob
—
0.6
0.9
pF
V
CB = 10 V, IE = 0, f = 1MHz
Gain bandwidth product
f
T
0.7
1.0
—
GHz
V
CE = 5 V, IC = 2 mA
Power gain
PG
10
15
—
dB
V
CC = 4 V, IC = 2 mA,
f = 900 MHz
Noise figure
NF
—
3.0
4.5
dB
V
CC = 4 V, IC = 2 mA,
f = 900 MHz
AGC voltage
V
AGC
1.8
—
2.7
V
CC = 4 V, IC = 2 mA,
f = 900 MHz, P
in = –50 dBm,
GR = 30 dB
Note:
Marking is “UI–”.
See characteristic curves of 2SC4229.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4260 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN RF Transistor |
| 2SC4260TI-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC4261 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN RF Transistor |
| 2SC4261QI-TR-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC4262 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN RF Transistor |
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