- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄370074 > 2SC4257 (Sanyo Electric Co.,Ltd.) NPN Triple Diffused Planar Silicon Transistor for 1200V/30mA High-Voltage Amplifier,High-Voltage Switching Applications(用于1200V/30mA 高電壓放大器應(yīng)用的NPN三路硅平面擴(kuò)散型晶體管) PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SC4257 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | NPN Triple Diffused Planar Silicon Transistor for 1200V/30mA High-Voltage Amplifier,High-Voltage Switching Applications(用于1200V/30mA 高電壓放大器應(yīng)用的NPN三路硅平面擴(kuò)散型晶體管) |
| 中文描述： | npn型三重?cái)U(kuò)散硅平面晶體管的1200V/30mA高電壓放大器，高壓開(kāi)關(guān)應(yīng)用（用于1200V/30mA高電壓放大器應(yīng)用的npn型三路硅平面擴(kuò)散型晶體管） |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 81K |
| 代理商： | 2SC4257 |
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
1200V/30mA High-Voltage Amplifier,
High-Voltage Switching Applications
Ordering number:EN2925A
2SC4257
D1598HA (KT)/D148MO, TS No.2925–1/3
Specifications
Absolute Maximum Ratings
at Ta = 25C
Package Dimensions
unit:mm
2010C
[2SC4257]
Features
· High breakdown voltage.
· Small C
ob
.
· Wide ASO.
· High reliability (Adoption of HVP process).
C
C
Electrical Characteristics
at Ta = 25C
1 : Base
2 : Collector
3 : Emitter
JEDEC : TO-220AB
EIAJ
: SC-46
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
s
g
n
R
t
U
e
g
a
V
V
a
V
t
e
C
t
e
C
o
p
s
D
e
s
r
m
e
s
a
B
E
a
-
e
C
-
e
C
-
m
E
r
e
C
r
e
C
r
e
C
V
V
V
O
O
O
B
E
B
C
C
E
IC
IP
C
PC
j
g
T
0
0
5
0
0
5
0
0
0
0
5
2
1
1
V
V
V
e
g
a
e
g
B
3
0
A
A
m
m
W
)
s
P
n
(
1
7
1
1
+
e
p
e
p
m
m
e
e
T
T
n
e
o
n
a
S
u
J
5
5
g
o
5
5
–
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
s
g
n
R
y
t
U
n
m
p
x
a
m
t
e
C
e
C
n
G
P
h
w
r
m
E
f
C
f
C
t
e
C
d
n
a
B
-
G
-
e
C
r
r
m
C
D
e
C
E
I
I
O
O
B
B
F
fT
s
E
C
E
hE
VB
C
VB
E
VE
C
VE
C
IC
=
IC
=
IC
=
IC
=
IE
=
VB
C
I
V
C0
=
C
=
I
V
I
A
B
I
A
m
I
A
μ
0
0
1
,
A
m
1
A
μ
0
0
1
0
0
1
=
0
0
I
V
I
V
5
0
1
=
m
3
2
1
4
=
=
=
E0
=
1
1
0
A
A
μ
μ
t
A
m
A
m
5
5
=
6
=
0
1
6
t
u
o
S
d
o
C
A
6
z
H
V
V
V
V
V
F
p
M
e
g
a
V
n
V
)
C
m
5
2
e
g
a
V
n
w
w
o
d
V
n
w
n
o
k
o
S
e
B
e
B
r
m
e
B
e
s
e
c
n
a
a
r
m
B
E
a
B
p
a
E
-
s
-
e
C
-
e
C
-
m
E
t
p
O
a
B
V
)
B
C
E
C
)
B
E
)
R
Cb
o
s
E
)
R
R
B
B
(
B
B
(
3
B
A
m
6
=
E0
=
E
I
C0
=
V
e
g
a
V
V
n
a
d
a
o
k
a
e
d
k
s
a
V
V
V
O
O
O
(
0
0
5
0
0
5
2
1
1
e
g
a
e
g
R
B=
∞
=
a
C
z
H
M
1
0
10.2
5.1
3.6
1
5
2
6
1
1.2
1
0.8
1.3
4.5
0.4
2.55
2.55
2
1
2
3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC4260 | Silicon NPN Epitaxial |
| 2SC4261 | Silicon NPN Epitaxial |
| 2SC4262 | Silicon NPN Epitaxial |
| 2SC4264 | Silicon NPN Epitaxial |
| 2SA1374 | Silicon PNP Epitaxial |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4258 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:FOR HIGH FREQUENCY, MEDIUM FREQUENCY AMPLIFY APPLICATION |
| 2SC4258_10 | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:FOR HIGH FREQUENCY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
| 2SC4259 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SC4260 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN RF Transistor |
| 2SC4260TI-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。