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參數(shù)資料
| 型號(hào)： | 2SC4225R2 |
| 廠商： | NEC Corp. |
| 英文描述： | TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 70MA I(C) | SOT-323 |
| 中文描述： | 晶體管|晶體管|叩| 12V的五（巴西）總裁|提供70mA一（c）|的SOT - 323 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 41K |
| 代理商： | 2SC4225R2 |
1996
DATA SHEET
SILICON TRANSISTOR
2SC4225
DESCRIPTION
The 2SC4225 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF through UHF band.
It has large dynamic range and good current characteristics.
FEATURES
Low Noise and High Gain
NF = 1.5 dB TYP.
S
21e
2
= 10 dB TYP.
at V
CE
= 10 V, I
C
= 5 mA, f = 1 GHz
at V
CE
= 10 V, I
C
= 20 mA, f = 1 GHz
(reference value)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CB0
V
CE0
V
EB0
I
C
P
T
T
j
T
stg
25
12
3.0
70
160
150
V
V
V
mA
mW
C
C
–65 to +150
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
Characteristics
Symbol
MIN.
TYP.
MAX.
Unit
Test Conditions
Collector Cutoff Current
I
CB0
1.0
μ
A
V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current
I
EB0
1.0
μ
A
V
EB
= 2 V, I
C
= 0
DC Current Gain
h
FE
40
80
200
V
CE
= 3 V, I
C
= 20 mA, pulsed
Gain Bandwidth Product
f
T
4
GHz
V
CE
= 3 V, I
C
= 20 mA, f = 1 GHz
Output Capacitance
C
ob
1.2
1.8
pF
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Insertion Power Gain
S
21e
2
7.5
9.0
dB
V
CE
= 3 V, I
C
= 20 mA, f = 1 GHz
Noise Figure
NF
1.5
3.0
dB
V
CE
= 3 V, I
C
= 5 mA, f = 1GHz
h
FE
Classifications
Rank
R2
R3
Marking
R2
R3
h
FE
40 to 120
100 to 200
Document No. P11192EJ2V0DS00 (2nd edition)
Date Published February 1996 P
Printed in Japan
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
PACKAGE DIMENSIONS
in millimeters
2.1 ± 0.1
1.25 ± 0.1
2
1
3
2
0
+
–
0
0
+
–
0
+
–
0
0
0
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
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|---|---|
| 2SC4225R3 | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4225R3 | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 70MA I(C) | SOT-323 |
| 2SC4226 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC4226(NE85630) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC4226_11 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:NPN Silicon Epitaxial Planar Transistor |
| 2SC4226-A | 功能描述:RF TRANSISTOR NPN SOT-323 制造商:cel 系列:- 包裝:剪帶 零件狀態(tài):有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:12V 頻率 - 躍遷:4.5GHz 噪聲系數(shù)（dB，不同 f 時(shí)的典型值）:1.2dB @ 1GHz 增益:9dB 功率 - 最大值:150mW 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:40 @ 7mA，3V 電流 - 集電極（Ic）（最大值）:100mA 安裝類型:表面貼裝 封裝/外殼:SC-70，SOT-323 供應(yīng)商器件封裝:SC-70-3 標(biāo)準(zhǔn)包裝:1 |
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