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參數(shù)資料
| 型號： | 2SC4224-M |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-220MF, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 37K |
| 代理商： | 2SC4224-M |
2SC4224
No.2763–2/4
Switching Time Test Circuit
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* : The hFE1 of the 2SC4224 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
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Continued from preceding page.
VR
RB
RL
200
VCC=400V
VBE= --5V
+
50
INPUT
OUTPUT
100
F
470
F
PW=20
s
IB1
IB2
D.C.
≤1%
10
7
5
3
100
7
5
3
2
23
5
2
3
35
5
77
0.01
0.1
1.0
hFE -- IC
ITR06550
2.8
2.0
2.4
1.6
0.8
3.2
1.2
0.4
0
02
6
48
10
15
37
9
IC -- VCE
IB=0
20mA
80mA
60mA
50mA
40mA
10mA
250mA
200mA
150mA
100mA
ITR06549
Ta=120
°C
25°C
--40°
C
0.1
1.0
10
5
3
2
5
7
3
25
7
33
22
55
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1.0
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3
25
7
33
22
55
0.1
1.0
0.01
VCE(sat) -- IC
ITR06551
T
a=
--40
°C
120
°C
25°C
IC / IB=5
VCE=5V
5
7
3
2
1.0
5
7
3
2
10
VBE(sat) -- IC
ITR06552
Ta= --40
°C
120°C
25°C
30mA
Collector
Current,
I C
–
A
Collector-to-Emitter Voltage, VCE – V
DC
Current
Gain,
h
FE
Collector Current, IC – A
Collector-to-Emitter
Saturation
Voltage,
V
CE
(sat)
–
V
Collector Current, IC – A
Base-to-Emitter
Saturation
Voltage,
V
BE
(sat)
–
V
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC4224L | 3 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 2SC4224-K | 3 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 2SC4224-L | 3 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 2SC4224-M | 3 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 2SC4224L | 3 A, 800 V, NPN, Si, POWER TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4224M-E | 制造商:ON Semiconductor 功能描述: |
| 2SC4225 | 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD |
| 2SC4225R2 | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 70MA I(C) | SOT-323 |
| 2SC4225R3 | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 70MA I(C) | SOT-323 |
| 2SC4226 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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