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參數(shù)資料
| 型號： | 2SC4215 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | 2-2E1A, SC-70, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 255K |
| 代理商： | 2SC4215 |
2SC4215
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC4215
High Frequency Amplifier Applications
FM, RF, MIX, IF Amplifier Applications
Small reverse transfer capacitance: Cre = 0.55 pF (typ.)
Low noise figure: NF = 2dB (typ.) (f = 100 MHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
4
V
Collector current
IC
20
mA
Base current
IB
4
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 40 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 4 V, IC = 0
0.5
μA
DC current gain
hFE
(Note)
VCE = 6 V, IC = 1 mA
40
200
Reverse transfer capacitance
Cre
VCB = 10 V, f = 1 MHz
0.55
pF
Transition frequency
fT
VCE = 6 V, IC = 1 mA
260
550
MHz
Collector-base time constant
Ccrbb’
VCE = 6 V, IE = 1 mA, f = 30 MHz
25
ps
Noise figure
NF
2
5.0
dB
Power gain
Gpe
VCC = 6 V, IE = 1 mA, f = 100 MHz,
Figure 1
17
23
dB
Note: hFE classification R: 40~80, O: 70~140, Y: 100~200
Unit: mm
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
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PDF描述 |
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| 2SC4217C | 0.2 A, 300 V, NPN, Si, POWER TRANSISTOR |
| 2SC4217 | 0.2 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SC4219-N | 4 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 2SC4219-M | 4 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 2SC4219N | 4 A, 400 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4215_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Planar Type High Frequency Amplifier Applications |
| 2SC4215O | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 20MA I(C) | SC-70 |
| 2SC4215-O | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:NPN Silicon Epitaxial Transistors |
| 2SC4215-O(TE85,F) | 制造商:Toshiba 功能描述:Cut Tape |
| 2SC4215-O(TE85L,F) | 功能描述:RF TRANS NPN 30V 20MA SC70 制造商:toshiba semiconductor and storage 系列:- 包裝:剪切帶（CT） 零件狀態(tài):Digi-Key 停止供應 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:30V 頻率 - 躍遷:550MHz 噪聲系數(shù)（dB，不同 f 時的典型值）:5dB @ 100MHz 增益:23dB 功率 - 最大值:100mW 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:40 @ 1mA，6V 電流 - 集電極（Ic）（最大值）:20mA 工作溫度:125°C（TJ） 安裝類型:表面貼裝 封裝/外殼:SC-70，SOT-323 供應商器件封裝:USM 標準包裝:1 |
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