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參數(shù)資料
| 型號： | 2SC4187R6C |
| 廠商： | NEC Corp. |
| 英文描述： | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 中文描述： | 晶體管|晶體管|叩| 8V的五（巴西）總裁| 5mA的一（c）|的SOT - 323 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 43K |
| 代理商： | 2SC4187R6C |
1996
DATA SHEET
SILICON TRANSISTOR
2SC4187
DESCRIPTION
The 2SC4187 is designed primarily for use in low voltage and low
current application up to UHF band. The 2SC4187 is ideal for pagers,
electro-optic detector postamplifier applications, and other battery pow-
ered systems. Super mini mold package makes it suitable for use in small
type equipments such as HICs.
FEATURES
Low Noise:
NF = 3.0 dB TYP. @V
CE
= 1 V, I
C
= 250
μ
A, f = 1.0 GHz
High Gain :
|S
21e
|
2
= 6.5 dB TYP. @V
CE
= 1 V, I
C
= 1 mA, f = 1.0 GHz
Small Package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
15
8
2
5
50
150
V
V
V
mA
mW
C
C
–65 to +150
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
Characteristic
Symbol
MIN.
TYP.
MAX.
Unit
Test Conditions
Collector Cutoff Current
I
CBO
0.1
μ
A
V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current
I
EBO
0.1
μ
A
V
EB
= 1 V, I
C
= 0
DC Current Gain
h
FE
50
100
250
V
CE
= 1 V, I
C
= 250
μ
A, pulsed
Gain Bandwidth Product
f
T
4.0
GHz
V
CE
= 1 V, I
C
= 1 mA, f = 1 GHz
Feedback Capacitance
C
re
0.5
0.7
pF
V
CB
= 1 V, I
E
= 0, f = 1 MHz
Insertion Power Gain
|S
21e
|
2
4.0
6.5
dB
V
CE
= 1 V, I
E
= 1 mA, f = 1 GHz
Noise Figure
NF
3.0
4.5
dB
V
CE
= 1 V, I
C
= 250
μ
A, f = 1 GHz
h
FE
Classification
Class
R6A
R6B
R6C
Marking
R6A
R6B
R6C
h
FE
50 to 100
80 to 160
125 to 250
PRECAUTION
Avoid high static voltages or electric fields so that this device would not suffer any damage due to those voltages or fields.
PACKAGE DIMENSIONS
in millimeters
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
2.1 ±0.1
1.25 ±0.1
2
1
3
2
0
+
–
0
0
+
–
0
+
–
0
0
0
Marking
1. Emitter
2. Base
3. Collector
Document No. P10370EJ3V0DS00 (3rd edition)
Date Published February 1996 P
Printed in Japan
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PDF描述 |
|---|---|
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| 2SC4196 | Silicon NPN Epitaxial |
| 2SC4197 | Silicon NPN Epitaxial |
| 2SC4204 | High-hFE, AF Amp Applications |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4188 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220AB 200V .1A 10W BCE |
| 2SC4188C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-220AB |
| 2SC4188D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-220AB |
| 2SC4188E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-220AB |
| 2SC4188F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-220AB |
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