參數(shù)資料
型號: 2SC4116-O
元件分類: 小信號晶體管
英文描述: 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: USM, 2-2E1A, SC-70, 3 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 172K
代理商: 2SC4116-O
2SC4116
2003-03-27
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4116
Audio Frequency General Purpose Amplifier Applications
High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
High hFE: hFE = 70~700
Low noise: NF = 1dB (typ.), 10dB (max)
Complementary to 2SA1586
Small package
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
30
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 60 V, IE = 0
0.1
mA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
mA
DC current gain
(Note)
hFE
(Note)
VCE = 6 V, IC = 2 mA
70
700
Collector-emitter saturation voltage
VCE (sat)
IC = 100 mA, IB = 10 mA
0.1
0.25
V
Transition frequency
fT
VCE = 10 V, IC = 1 mA
80
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
2.0
3.5
pF
Noise figure
NF
VCE = 6 V, IC = 0.1 mA, f = 1 kHz,
Rg = 10 kW,
1.0
10
dB
Note: hFE classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400, BL (L): 350~700, ( ) marking symbol
Marking
Unit: mm
JEDEC
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
相關PDF資料
PDF描述
2SC4116-Y-TP 150 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC4116-GR-TP 150 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC4117-BL 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC4117 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC4117-BL 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR
相關代理商/技術參數(shù)
參數(shù)描述
2SC4116-O(TE85L,F) 功能描述:TRANS NPN 50V 150MA SC70 制造商:toshiba semiconductor and storage 系列:- 包裝:剪切帶(CT) 零件狀態(tài):Digi-Key 停止供應 晶體管類型:NPN 電流 - 集電極(Ic)(最大值):150mA 電壓 - 集射極擊穿(最大值):50V 不同?Ib,Ic 時的?Vce 飽和值(最大值):250mV @ 10mA,100mA 電流 - 集電極截止(最大值):100nA(ICBO) 不同?Ic,Vce?時的 DC 電流增益(hFE)(最小值):70 @ 2mA,6V 功率 - 最大值:100mW 頻率 - 躍遷:80MHz 工作溫度:125°C(TJ) 安裝類型:表面貼裝 封裝/外殼:SC-70,SOT-323 供應商器件封裝:USM 標準包裝:1
2SC4116SU-GR,LF 功能描述:兩極晶體管 - BJT SM Sig PNP Trans VCEO -50V IC -150mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC4116SU-Y,LF 功能描述:兩極晶體管 - BJT SM Sig PNP Trans VCEO -50V IC -150mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC4116W 制造商:BILIN 制造商全稱:Galaxy Semi-Conductor Holdings Limited 功能描述:Silicon Epitaxial Planar Transistor
2SC4116Y 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SC-70