參數(shù)資料
型號(hào): 2SC4093
廠商: NEC Corp.
英文描述: MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
中文描述: 微波低噪聲放大器NPN硅外延晶體管4個(gè)引腳微型模具
文件頁數(shù): 1/8頁
文件大?。?/td> 70K
代理商: 2SC4093
DATA SHEET
SILICON TRANSISTOR
2SC4093
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
Document No. P10365EJ3V1DS00 (3rd edition)
Date Published March 1997 N
Printed in Japan
1991
DESCRIPTION
The 2SC4093 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF, UHF and CATV band.
It has large dynamic range and good current characteritics, and is
contatined in a 4 pins mini-mold package which enables high-isolation
gain.
FEATURES
Low Noise
NF = 1.1 dB TYP. @ V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
High Power Gains
S
21e
2
= 13 dB TYP. @ V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
ORDERING INFORMATION
PART
NUMBER
QUANTITY
PACKING STYLE
2SC4093-T1
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin3 (Base), Pin4 (Emitter) face to perforation side
of the tape.
2SC4093-T2
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) face to perforation
side of the tape.
* Please contact with responsible NEC person, if you require evaluation
sample.
Unit sample quantity shall be 50 pcs. (Part No.: 2SC4093)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
20
12
3.0
100
200
150
V
V
V
mA
mW
C
C
65 to +150
PACKAGE DIMENSIONS
(Units: mm)
PIN CONNECTIONS
1.
2.
3.
4.
Emitter
Collector
Emitter
Base
5
°
5
°
5
°
5
°
0
0
2
(
(
0
0
1
+
0
0
+
0
0
4
1
3
2
+
0
2.8
1.5
+0.2
0.3
+0.2
0.1
0
+
0
0
+
0
0
+
0
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