參數(shù)資料
型號(hào): 2SC4057
廠(chǎng)商: MICRO COMMERCIAL COMPONENTS
元件分類(lèi): 功率晶體管
英文描述: 7 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-247AD
封裝: TO-247, 3 PIN
文件頁(yè)數(shù): 1/1頁(yè)
文件大小: 92K
代理商: 2SC4057
Features
With TO-247 package
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
450
V
VCBO
Collector-Base Voltage
600
V
VEBO
Emitter-Base Voltage
7.0
V
IC
Collector Current
7.0
A
PC
Collector power dissipation
80
W
TJ
Junction Temperature
150
OC
TSTG
Storage Temperature
-55 to +150
OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
VCBO
Collector-base breakdown voltage
(IC=1mAdc; IE=0)
600
---
Vdc
V(SUS)CEO
Collector-Emitter Breakdown Voltage
(IC=20mAdc, IB=0)
450
---
Vdc
VEBO
Emitter-base breakdown voltages
(IC=1mA; IB=0)
7.0
---
Vdc
ICBO
Collector-Base Cutoff Current
(VCB=600Vdc,IE=0)
---
0.1
mAdc
IEBO
Emitter-Base Cutoff Current
(VEB=7.0Vdc, IC=0)
---
0.1
mAdc
ICEO
Collector-emitter Cutoff Current
(VCE=450V; IB=0)
---
0.1
mAdc
ON CHARACTERISTICS
hFE
Forward Current Transfer ratio
(IC=4.0Adc, VCE=5.0Vdc)
10
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=4.0Adc, IB=0.8Adc)
---
1.0
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=4.0Adc,IB=0.8Adc)
---
1.5
Vdc
TO-247
PIN 1.
BASE
PIN 2.
COLLECTOR
PIN 3.
EMITTER
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
www.mccsemi.com
2SC4057
NPN Silicon
Power Transistors
Revision: 1
2003/04/21
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
---
.866
---
22.00
B
---
.669
---
17.00
C
.185
.209
4.70
5.30
D
.039
.055
1.00
1.40
E
.067
.091
1.70
2.30
F
---
.098
---
2.50
G
.207
.222
5.25
5.65
H
.106
.130
2.70
3.30
J
.018
.033
0.45
0.85
K
.748
---
19.00
---
L
.583
.598
14.80
15.20
M
.067
.106
1.70
2.70
P
---
.177
---
4.50
Q
.122
.138
3.10
3.50
R
.197
.236
5.00
6.00
U
.461
.500
11.70
12.70
V
---
.138
---
3.50
H
A
K
B
E
C
R
J
P
U L
1
2
3
Q
G
V
D
F
M
相關(guān)PDF資料
PDF描述
2SC4060P 20 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-247
2SC4060-BP 20 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-247
2SC4075C 0.2 A, 300 V, NPN, Si, POWER TRANSISTOR
2SC4081BQ 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC4081BR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC4057-7100 功能描述:兩極晶體管 - BJT VCEO=450 IC=8 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC4057-7112 功能描述:兩極晶體管 - BJT VCEO=450 IC=8 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC4058 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SC4058-7100 功能描述:兩極晶體管 - BJT V=450 IC=10 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC4058-7112 功能描述:兩極晶體管 - BJT V=450 IC=10 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2