參數(shù)資料
型號: 2SC4027L-T-TN3-R
廠商: UNISONIC TECHNOLOGIES CO LTD
元件分類: 小信號晶體管
英文描述: 1500 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-252
封裝: LEAD FREE PACKAGE-3
文件頁數(shù): 4/5頁
文件大?。?/td> 145K
代理商: 2SC4027L-T-TN3-R
2SC4027
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
4 of 5
www.unisonic.com.tw
QW-R209-018.B
TYPICAL CHARACTERISTICS
0
2
1.4
Collector Current vs.
Collector to Emitter Voltage
Collector
Cur
rent,
Ic
(A)
13
4
1.6
1.8
5
Collector to Emitter Voltage, VCE (V)
50mA
40mA
30mA
20mA
10mA
5mA
2mA
1mA
IB=0
1.2
1.0
0.8
0.6
0.4
0.2
0
020
0.8
Collector Current vs.
Collector to Emitter Voltage
Collector
Cur
rent,
Ic
(A)
10
30
40
1.0
50
Collector to Emitter Voltage, VCE (V)
5.
0m
A
4.0mA
3.5mA 3.0mA
2.5mA
0.5mA
0.6
0.4
0.2
0
4.5mA
2.0mA
1.5mA
1.0mA
IB=0
0
0.4
Collector Current vs.
Base to Emitter Voltage
Collector
Current,
Ic
(A)
0.2
0.6
0.8
1.6
1.2
Base to Emitter Voltage, VBE (V)
1.2
0.8
0.4
0
VCE=5V
Ta=75°C
Ta=25°C
Ta=-25°C
DC Current vs. Collector Current
DC
Cu
rren
tGain
,h
FE
1000
Collector Current, Ic (A)
100
10
VCE=5V
-25°C
25°C
0.01
0.1
1.0
Ta=75°C
Gain Bandwidth Product vs.
Collector Current
Gain
Ban
dwi
dth
Prod
uct,
f T
(MHz)
Collector Current, Ic (A)
100
10
VCE=10V
0.01
0.1
1.0
Output Capacitance vs.
Collector to Base Voltage
Output
Capacitance,
C
ob
(pF)
100
Collector to Base Voltage, VCB (V)
10
f=1MHz
10
相關(guān)PDF資料
PDF描述
2SC4027G-T-TN3-R 1500 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-252
2SC4052 3 A, 450 V, NPN, Si, POWER TRANSISTOR
2SC4055 8 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SC4056 8 A, 450 V, NPN, Si, POWER TRANSISTOR
2SC4059 15 A, 450 V, NPN, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC4027L-X-TA3-T 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH-VOLTAGE SWITCHING APPLICATIONS
2SC4027L-X-TN3-R 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH-VOLTAGE SWITCHING APPLICATIONS
2SC4027R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-252
2SC4027S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-252
2SC4027S-E 功能描述:兩極晶體管 - BJT BIP NPN 1.5A 160V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2