- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371508 > 2SC4004 (PANASONIC CORP) Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) PDF資料下載
參數(shù)資料
| 型號： | 2SC4004 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
| 中文描述： | 1 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 59K |
| 代理商： | 2SC4004 |
1
Power Transistors
2SC4004
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
I
Features
G
High-speed switching
G
High collector to base voltage V
CBO
G
Wide area of safe operation (ASO)
G
Satisfactory linearity of foward current transfer ratio h
FE
G
Full-pack package which can be installed to the heat sink with
one screw
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
900
900
800
7
2
1
0.3
30
2
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
C
C
T
C
=25
°
C
Ta=25
°
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 900V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
= 1mA, I
B
= 0
V
CE
= 5V, I
C
= 0.05A
V
CE
= 5V, I
C
= 0.5A
I
C
= 0.2A, I
B
= 0.04A
I
C
= 0.2A, I
B
= 0.04A
V
CE
= 10V, I
C
= 0.05A, f = 1MHz
I
C
= 0.2A, I
B1
= 0.04A, I
B2
= – 0.04A,
V
CC
= 250V
min
800
6
3
typ
4
max
50
50
1.5
1.0
1.0
3.0
1.0
Unit
μ
A
μ
A
V
V
V
MHz
μ
s
μ
s
μ
s
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(b)
10.0
±
0.2
4.2
±
0.2
2.7
±
0.2
1.3
±
0.2
0.8
±
0.1
1.7
±
0.2
1.05
±
0.1
2.54
±
0.3
5.08
±
0.5
0
±
0
7
±
0
4
±
0
1
±
0
1
±
0
4
S
5.5
±
0.2
φ
3.1
±
0.1
0.5
+0.2
1
2
3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC4026 | For high breakdown voltage high-speed switching |
| 2SC4029 | Power Amplifier NPN Transistor(功率放大器NPN晶體管) |
| 2SC4051 | Switching Power Transistor(3A NPN) |
| 2SC4052 | Switching Power Transistor(3A NPN) |
| 2SC4053 | Switching Power Transistor(5A NPN) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4005 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Driver Applications |
| 2SC4006 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANS. TO220ML50V 3A 20W BCE |
| 2SC4007 | 制造商:ROHM 制造商全稱:Rohm 功能描述:TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE |
| 2SC4007D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SC4007E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 4A I(C) | TO-220AB |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。