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參數(shù)資料
| 型號(hào)： | 2SC4003TP-FA |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 200 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | TP-FA, 4 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 37K |
| 代理商： | 2SC4003TP-FA |
2SC4003
No.2959-1/4
Features
High breakdown voltage.
Adoption of MBIT process.
Excellent hFE linearity.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
400
V
Collector-to-Emitter Voltage
VCEO
400
V
Emitter-to-Base Voltage
VEBO
5V
Collector Current
IC
200
mA
Collector Current (Pulse)
ICP
400
mA
Collector Dissipation
PC
1W
Tc=25
°C10
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=300V, IE=0
0.1
A
Emitter Cutoff Current
IEBO
VEB=4V, IC=0
0.1
A
DC Current Gain
hFE
VCE=10V, IC=50mA
60*
200*
Gain-Bandwidth Product
fT
VCE=30V, IC=10mA
70
MHz
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=50mA, IB=5mA
0.6
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=50mA, IB=5mA
1.0
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10A, IE=0
400
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
400
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10A, IC=0
5
V
* : The 2SC4003 is classified by 50mA hFE as follows :
Continued on next page.
Ordering number : ENN2959B
32505TN (PC)/82903TN (KT)/D1598HA (KT)/8219MO/6139MO, TS
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
2SC4003
NPN Triple Diffused Planar Silicon Transistor
High-Voltage Driver Applications
Rank
D
E
hFE
60 to 120
100 to 200
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