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參數(shù)資料
| 型號(hào)： | 2SC3944 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN epitaxial planar type(For low-frequency driver and high power amplification) |
| 中文描述： | 1 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | SC-67, TO-220F-A1, FULL PACK-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 42K |
| 代理商： | 2SC3944 |
1
Power Transistors
2SC3944, 2SC3944A
Silicon NPN epitaxial planar type
For low-frequency driver and high power amplification
Complementary to 2SA1535 and 2SA1535A
I
Features
G
Satisfactory foward current transfer ratio h
FE
vs. collector cur-
rent I
C
characteristics
G
High transition frequency f
T
G
Makes up a complementary pair with 2SA1535 and 2SA1535A,
which is optimum for the driver-stage of a 60 to 100W output
amplifier
G
Full-pack package which can be installed to the heat sink with
one screw
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
150
180
150
180
5
1.5
1
15
2.0
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
2SC3944
2SC3944A
2SC3944
2SC3944A
T
C
=25
°
C
Ta=25
°
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff
current
Collector to base
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CEO
V
EBO
h
FE1*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 150V, I
E
= 0
V
CB
= 180V, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 10V, I
C
= 150mA
V
CE
= 5V, I
C
= 500mA
I
C
= 500mA, I
B
= 50mA
I
C
= 500mA, I
B
= 50mA
V
CB
= 10V, I
E
= –50mA, f = 10MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
150
180
5
95
50
typ
160
100
0.5
1
200
30
max
10
10
220
2
2
50
Unit
μ
A
V
V
V
V
MHz
pF
2SC3944
2SC3944A
2SC3944
2SC3944A
*
h
FE1
Rank classification
Rank
Q
R
h
FE1
95 to 155
130 to 220
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0
±
0.2
5.5
±
0.2
7
±
0
1
±
0
0
±
0
1
±
0
S
4
0.5
+0.2
–0.1
1.4
±
0.1
1.3
±
0.2
0.8
±
0.1
2.54
±
0.25
5.08
±
0.5
2
1
3
2.7
±
0.2
4.2
±
0.2
4
±
0
φ
3.1
±
0.1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC3944A | 制造商:Panasonic Industrial Company 功能描述:DISCD TRANSISTOR |
| 2SC3944AQ | 功能描述:TRANS NPN HF 180VCEO 1A TO-220F RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SC3945 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-22OFA 300V .1A 40W BCE |
| 2SC3946 | 制造商:Distributed By MCM 功能描述:SUB ONLY MATSUSHITA TRANSISTOR TO-220FA 350V .2A 40W BCE |
| 2SC3950 | 制造商:SANYO Semiconductor Co Ltd 功能描述: |
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