參數(shù)資料
型號: 2SC3867
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Epitaxial
中文描述: npn型硅外延
文件頁數(shù): 2/6頁
文件大小: 27K
代理商: 2SC3867
2SC3867
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
20
V
Collector to emitter voltage
11
V
Emitter to base voltage
3
V
Collector current
50
mA
Collector power dissipation
150
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
20
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
11
V
I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
3
V
I
E
= 10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
V
CE(sat)
0.5
μ
A
V
CB
= 15 V, I
E
= 0
I
C
= 10 mA, I
B
= 5 mA
Collector to emitter saturation
voltage
0.7
V
DC current transfer ratio
h
FE
f
T
Cob
45
200
V
CE
= 10 V, I
C
= 5 mA
V
CE
= 10 V, I
C
= 10 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
V
= 10 V, I
C
= 1 mA,
f = 900 MHz,
Gain bandwidth product
2.5
3.8
GHz
Collector output capacitance
0.8
1.5
pF
Conversion gain
CG
10
14
dB
Noise figure
NF
10
14
dB
f
osc
= 930 MHz, (–5dBm),
f
out
= 30 MHz
Note:
Marking is “DI–”
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