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參數(shù)資料
| 型號(hào)： | 2SC3838G-D-AE3-R |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | HALOGEN FREE PACKAGE-3 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大小： | 128K |
| 代理商： | 2SC3838G-D-AE3-R |
2SC3838
NPN EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 2
www.unisonic.com.tw
QW-R220-018,Ca
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
20
V
Collector-Emitter Voltage
VCEO
11
V
Emitter-Base Voltage
VEBO
3
V
Collector current
IC
50
mA
Collector power dissipation
PD
0.2
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-base breakdown voltage
BVCBO IC=10μA
20
V
Collector-emitter breakdown voltage
BVCEO IC=1mA
11
V
Emitter-base breakdown voltage
BVEBO IE=10μA
3
V
Collector cutoff current
ICBO
VCB=10V
0.5
μA
Emitter cutoff current
IEBO
VEB=2V
0.5
μA
Collector-emitter saturation voltage
VCE(SAT) IC =10mA, IB= 5mA
0.5
V
DC current transfer ratio
hFE
VCE=10V, IC =5mA
56
400
Transition frequency
fT
VCE=10V, IE=10mA, f=500MHz
1.4
3.2
GHz
Output capacitance
Cob
VCB=10V, IE=0A, f=1MHz
0.8
1.5
pF
Collector-base time constant
rbb’Cc VCB=10V, IC=10mA, f=31.8MHz
4
12
ps
Noise factor
NF
VCE=6V, IC=2mA, f=500MHz, Rg=50
3.5
dB
CLASSIFICATION of hFE
RANK
A
B
C
D
RANGE
56 ~ 110
100 ~ 170
120 ~ 270
250 ~ 400
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| 2SC3838KT146 | 制造商:ROHM Semiconductor 功能描述: |
| 2SC3838KT146N | 功能描述:兩極晶體管 - BJT NPN 11V 50MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC3838KT146N/P | 制造商:ROHM Semiconductor 功能描述:Transistor, NPN, RF, 11V, 50mA, SMT3, 2 |
| 2SC3838KT146P | 功能描述:兩極晶體管 - BJT NPN 11V 50MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC3839K | 制造商:ROHM Semiconductor 功能描述:HIGH FREQ NPN SM BIPOLAR TRANSISTOR SOT-23 - free partial T/R at 500. |
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