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參數(shù)資料
| 型號(hào)： | 2SC3829 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Silicon NPN epitaxial planer type(For UHF band low-noise amplification) |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | MINI3-G1, SC-59, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 38K |
| 代理商： | 2SC3829 |
1
Transistor
2SC3829
Silicon NPN epitaxial planer type
For UHF band low-noise amplification
I
Features
G
Low noise figure NF.
G
High gain.
G
High transition frequency f
T
.
G
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65
±
0.15
0.65
±
0.15
3
1
2
0
0
1
±
0
0
+
–
1
+
–
0
0.4
±
0.2
0
0
+
–
1
0.1 to 0.3
2
+
–
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
15
10
2
80
200
150
–55 ~ +150
Unit
V
V
V
mA
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Maximum unilateral power gain
Noise figure
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
h
FE
f
T
C
ob
| S
21e
|
2
GUM
NF
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 2V, I
C
= 0
I
C
= 10
μ
A, I
E
= 0
I
C
= 100
μ
A, I
B
= 0
V
CE
= 8V, I
C
= 20mA
V
CE
= 8V, I
C
= 20mA, f = 800MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
= 8V, I
C
= 20mA, f = 800MHz
V
CE
= 8V, I
C
= 20mA, f = 800MHz
V
CE
= 8V, I
C
= 20mA, f = 800MHz
min
15
10
50
5
10
typ
150
6
0.7
13.5
15
max
1
1
300
1.2
2
Unit
μ
A
μ
A
V
V
GHz
pF
dB
dB
dB
Marking symbol :
3M
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