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| 型號： | 2SC3808 |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-126LP, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 33K |
| 代理商： | 2SC3808 |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
High hFE, Low-Frequency
General-Purpose Amplifier Applications
Ordering number:ENN2015A
2SC3808
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70804TN (PC)/N3098HA (KT)/3257AT, TS No.2015–1/4
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2043B
[2SC3808]
Applications
Low frequency general-purpose amplifiers, drivers.
Features
Large current capacity (IC=2A).
Adoption of MBIT process.
High DC current gain (hFE=800 to 3200).
Low collector-to-emitter saturation voltage
(VCE(sat)≤0.5V).
High VEBO (VEBO≥15V).
C
Electrical Characteristics at Ta = 25C
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126LP
Tc=25C
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Continued on next page.
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