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參數(shù)資料
| 型號： | 2SC3807MP |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | NPN Epitaxial Planar Silicon Transistor 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications |
| 中文描述： | 瑞展25V的硅晶體管/甲高參與者中，低頻通用放大器應(yīng)用 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 53K |
| 代理商： | 2SC3807MP |
2SC3807MP
No. A0629-2/4
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Collector Cutoff Current
Emitter Cutoff Current
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=20V, IE=0A
VEB=10V, IC=0A
VCE=5V, IC=500mA
VCE=5V, IC=1A
VCE=10V, IC=50mA
VCB=10V, f=1MHz
IC=1A, IB=20mA
IC=1A, IB=20mA
IC=10
μ
A, IE=0A
IC=1mA, RBE=
∞
IE=10
μ
A, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
0.1
0.1
μ
A
μ
A
DC Current Gain
1000
600
2000
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
260
24
0.135
0.85
MHz
pF
V
V
V
V
V
μ
s
μ
s
μ
s
0.5
1.2
30
25
17
0.14
0.8
0.1
Package Dimensions
unit : mm (typ)
7520-002
Switching Time Test Circuit
VR
RB
VCC=10V
7IB1= --7IB2=IC=700mA
--5V
+
+
50
RL
INPUT
OUTPUT
100
μ
F
470
μ
F
PW=20
μ
s
D.C.
≤
1%
IB1
IB2
1 2 3
0.5
0.6
0.5
0.5
1.45
1.45
6.0
5.0
4.7
3
1
8
1
1 : Emitter
2 : Collector
3 : Base
SANYO : MP
Collector-to-Emitter Voltage, VCE -- V
C
IC -- VCE
50mA
Base-to-Emitter Voltage, VBE -- V
IC -- VBE
C
2.0
1.6
1.2
0.4
0.8
1.8
1.4
0.6
1.0
0.2
0
0.4
0
0.8
1.2
1.6
2.0
0.2
0.6
1.0
1.4
1.8
IT11142
1.0mA
2.0mA
IB=0
mA
0.5mA
1.m
2m
30mA
70mA
60mA
2.0
1.6
1.2
0.4
0.8
1.8
1.4
0.6
1.0
0.2
0
T7
°
C
2
°
C
-
°
C
VCE=5V
0
0.2
0.4
0.6
0.8
1.2
1.0
IT11143
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