參數(shù)資料
型號(hào): 2SC3793
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Epitaxial
中文描述: npn型硅外延
文件頁(yè)數(shù): 2/6頁(yè)
文件大小: 27K
代理商: 2SC3793
2SC3793
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
20
V
Collector to emitter voltage
15
V
Emitter to base voltage
3
V
Collector current
50
mA
Collector power dissipation
150
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
20
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
15
V
I
C
= 1 mA, R
BE
=
Collector cutoff current
I
CBO
I
EBO
h
FE
V
CE(sat)
1
μ
A
μ
A
V
CB
= 15 V, I
E
= 0
V
EB
= 3 V, I
C
= 0
V
CE
= 10 V, I
C
= 5 mA
I
C
= 20 mA, I
B
= 4 mA
Emitter cutoff current
1
DC current transfer ratio
30
200
Collector to emitter saturation
voltage
0.5
V
Collector output capacitance
Cob
0.7
1
pF
V
CB
= 10 V, I
E
= 0, f = 1MHz
V
CE
= 10 V, I
C
= 5 mA
Gain bandwidth product
Note:
Marking is “IP-”.
f
T
2.9
GHz
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