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參數(shù)資料
| 型號： | 2SC3647S |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243 |
| 封裝： | ULTRA SMALL, PCP, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 46K |
| 代理商： | 2SC3647S |
2SA1417 / 2SC3647
No.2006-1/5
Features
Adoption of FBET, MBIT processes.
High breakdown voltage and large current capacity.
Ultrasmall size making it easy to provide high-density small-sized hybrid ICs.
Specifications ( ) : 2SA1417
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)120
V
Collector-to-Emitter Voltage
VCEO
(--)100
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--)2
A
Collector Current (Pulse)
ICP
(--)3
A
Collector Dissipation
PC
500
mW
Mounted on a ceramic board (250mm2!0.8mm)
1.5
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)100V, IE=0A
(--)100
nA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)100
nA
DC Current Gain
hFE
VCE=(--)5V, IC=(--)100mA
100*
400*
Gain-Bandwidth Product
fT
VCE=(--)10V, IC=(--)100mA
120
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(25)16
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)1A, IB=(--)100mA
(--0.22)0.13
(--0.6)0.4
V
Base-to-Emitterr Saturation Voltage
VBE(sat)
IC=(--)1A, IB=(--)100mA
(--)0.85
(--)1.2
V
Continued on next page.
* ; The 2SA1417 / 2S3647 are classified by 100mA hFE as follws:
Rank
R
S
T
hFE
100 to 200
140 to 280
200 to 400
Marking 2SA1417: AC
2SC3647: CC
Ordering number : EN2006C
80906 / 22006EA MS IM / O3103TN (KT) / 71598HA (KT) / 3277KI / N255MW, TS
2SA1417 / 2SC3647
PNP / NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching
Applications
SANYO Semiconductors
DATA SHEET
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2SC3647S-TD-E | 功能描述:兩極晶體管 - BJT BIP NPN 2A 100V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC3647T-TD-E | 功能描述:兩極晶體管 - BJT BIP NPN 2A 100V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC3648S-TD-E | 功能描述:兩極晶體管 - BJT BIP NPN 0.7A 160V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC3648T-TD-E | 功能描述:兩極晶體管 - BJT BIP NPN 0.7A 160V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC3649S-TD-E | 功能描述:兩極晶體管 - BJT BIP NPN 1.5A 160V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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