參數資料
型號: 2SC3587
廠商: NEC Corp.
英文描述: NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
中文描述: npn型外延硅晶體管低噪聲放大用于微波
文件頁數: 2/8頁
文件大?。?/td> 91K
代理商: 2SC3587
2
2SC3587
Note
Test block diagram
Noise Diode
Coax. SW
Coax. SW
Post Amp
Mixer
*
NF Meter
Network
Analyzer
Coax. SW
Stub
Tuner
Bias
Tee
Bias
Tee
Transistor
Under
Test
Sweeper
To test 1 GHz or lower, insert a bandpass filter.
*
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
MAG AND INSERTION GAIN vs.
FREQUENCY
REVERSE TRANSFER CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
0.8
0.6
0.4
0.2
0
3
200
100
50
20
10
2
1
0.7
0.5
0.3
0.2
0.1
1
2
3
5
V
CB
- Collector to Base Voltage -V
7
10
20
30
50
100
f = 1.0 MHz
T
A
- Ambient Temperature -
°
C
150
0.1
5
0
5
10
15
20
25
0.2
0.5
1
0.5
1
5
I
C
- Collector Current - mA
10
50
f - Frequency - GHz
2
|
2
M
2
5
10
200
P
T
C
r
h
F
with heat sink
R
th(j
e)
90
°
C/W
V
CE
= 6 V
I
C
= 10 mA
V
CE
= 6 V
MAG
R
th(j
a)
590
°
C/W
|S
21e
|
2
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