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參數(shù)資料
| 型號： | 2SC3585R |
| 廠商： | NEC Corp. |
| 英文描述： | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 35MA I(C) | SOT-346 |
| 中文描述： | 晶體管|晶體管|叩| 10V的五（巴西）總裁| 35MA一（c）|的SOT - 346 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 103K |
| 代理商： | 2SC3585R |
3
2SC3585
0
0.5
2
1
5
4
3
7
6
1
5
10
50 70
I
C
-Collector Current-mA
NOISE FIGURE vs.
COLLECTOR CURRENT
N
V
CE
= 6 V
f = 2.0 GHz
S-PARAMETER
V
CE
= 6.0 V, I
C
= 3.0 mA, Z
O
= 50
f (MHz)
200
400
600
800
1000
1200
1400
1600
1800
2000
S
11
0.858
0.724
0.580
0.457
0.362
0.304
0.232
0.179
0.147
0.108
S
11
23.1
40.6
51.1
58.9
65.6
73.1
82.2
84.9
88.2
104.1
S
21
8.499
6.923
5.951
4.615
4.134
3.412
3.180
2.763
2.726
2.378
S
21
S
12
0.030
0.060
0.080
0.099
0.106
0.129
0.148
0.154
0.188
0.197
S
12
46.5
58.7
60.3
60.2
61.2
61.1
60.1
59.5
58.7
56.8
S
22
0.905
0.826
0.749
0.666
0.614
0.574
0.542
0.514
0.483
0.455
S
22
13.5
21.2
27.0
28.6
30.1
30.0
31.7
35.2
40.1
42.6
153.3
131.6
118.4
104.9
98.0
88.9
82.0
75.7
70.5
64.9
V
CE
= 6.0 V, I
C
= 10.0 mA, Z
O
= 50
f (MHz)
200
400
600
800
1000
1200
1400
1600
1800
2000
S
11
0.613
0.406
0.285
0.214
0.156
0.130
0.105
0.065
0.042
0.018
S
11
37.0
53.6
56.0
57.6
58.1
54.2
56.5
55.0
48.9
65.6
S
21
S
21
S
12
0.021
0.053
0.064
0.089
0.095
0.119
0.141
0.158
0.178
0.202
S
12
52.5
70.6
73.0
71.7
70.6
70.3
68.3
68.9
66.5
66.2
S
22
0.781
0.651
0.590
0.548
0.526
0.506
0.489
0.470
0.439
0.426
S
22
19.4
22.4
24.0
22.8
23.3
22.1
24.8
27.9
31.4
36.5
16.141
10.096
7.640
5.564
4.787
3.876
3.573
3.058
2.997
2.590
133.9
111.5
101.4
90.7
86.0
79.3
74.0
69.4
65.3
60.7
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SC3585-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR |
| 2SC3585-T1B-A(R) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SC3585-T1B-A-S | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC3588-AZ(L) | 制造商:Renesas Electronics 功能描述:Bulk |
| 2SC3588-K(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
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