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參數(shù)資料
| 型號(hào)： | 2SC3583S |
| 廠商： | NEC Corp. |
| 英文描述： | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 中文描述： | 晶體管 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 103K |
| 代理商： | 2SC3583S |
2
2SC3583
TYPICAL CHARACTERISTICS (T
A
= 25 C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
100
0
10
20
50
100
200
50
1
5
10
50
0.5
100
150
T
A
-Ambient Temperature-
°
C
I
C
-Collector Current-mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
P
T
-
h
F
-
V
CE
= 8 V
0
0.5
5
10
15
1
5
10
50 70
I
C
-Collector Current-mA
INSERTION GAIN vs.
COLLECTOR CURRENT
|
2
|
2
-
V
CE
= 8 V
f = 1.0 GHz
0.1
0.5
0.3
0.2
0.7
1
3
2
1
3
2
5
7
10
20
30
V
CB
-Collector to Base Voltage-V
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
C
r
-
f = 1.0 MHz
0
12
8
4
16
20
0.1
0.3
f-Frequency-GHz
0.2
0.5 0.7.
1.0
2.0
3.0
INSERTION GAIN, MAXIMUM AVAILABLE
GAIN vs. FREQUENCY
M
|
2
|
2
-
V
CE
= 8 V
I
C
= 20 mA
1
5
3
2
7
10
30
20
1
3
2
5
7
10
20
30
I
C
-Collector Current-mA
GAIN BANDWIDTH PRODUUT vs.
COLLECTOR CURRENT
f
T
-
V
CE
= 8 V
Free air
|S
21e
|
2
MAG
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC3585 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR |
| 2SC3585Q | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 2SC3585R | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 35MA I(C) | SOT-346 |
| 2SC3585R43 | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 2SC3585R44 | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 35MA I(C) | SOT-346 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC3583T1B | 制造商:NEC 功能描述:* 制造商:NEC 功能描述:Transistor 3k per reel |
| 2SC3583-T1B | 制造商:NEC 功能描述:Transistor 3k per reel 制造商:NEC Electronics Corporation 功能描述: |
| 2SC3583-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans GP BJT NPN 10V 0.065A 3-Pin SC-59 T/R |
| 2SC3583-T1B-A(R) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SC3583-T1B-A(S) | 制造商:Renesas Electronics 功能描述:NPN |
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