參數(shù)資料
型號: 2SC3494
廠商: Hitachi,Ltd.
元件分類: 8位微控制器
英文描述: ECONOLINE: RSZ/P - 1kVDC
中文描述: ECONOLINE:RSZ / P - 1kVDC 2kVDC隔離UL94V - 0封裝材料所需的散熱片,無外置。組件所需的環(huán)形磁ContinuousShort電路保護(/ P的后綴)
文件頁數(shù): 2/5頁
文件大小: 24K
代理商: 2SC3494
2SA1188, 2SA1189
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
2SA1188
2SA1189
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
Tj
–90
–120
V
Collector to emitter voltage
–90
–120
V
Emitter to base voltage
–5
–5
V
Collector current
–100
–100
mA
Emitter current
100
100
mA
Collector power dissipation
400
400
mW
Junction temperature
150
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
–55 to +150
Electrical Characteristics
(Ta = 25°C)
2SA1188
2SA1189
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–90
–120
V
I
C
= –10
μ
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–90
–120
V
I
C
= –1 mA, R
BE
=
Emitter to base
breakdown voltage
V
(BR)EBO
–5
–5
V
I
E
= –10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
I
EBO
h
FE
*
1
–0.1
–0.1
μ
A
μ
A
V
CB
= –70 V, I
E
= 0
V
EB
= –2 V, I
C
= 0
V
CE
= –12 V,
I
C
= –2 mA*
2
I
C
= –10 mA,
I
B
= –1 mA*
2
Emitter cutoff current
–0.1
–0.1
DC current trnsfer ratio
250
800
250
800
Collector to emitter
saturation voltage
V
CE(sat)
–0.05 –0.15 —
–0.05 –0.15 V
Base to emitter
saturation voltage
V
BE(sat)
–0.7
–1.0
–0.7
–1.0
V
Gain bandwidth product f
T
130
130
MHz
V
CE
= –6 V,
I
C
= –10 mA
V
= –10 V, I
E
= 0,
f = 1 MHz
Collector output
capacitance
Notes: 1. The 2SA1188 and 2SA1189 are grouped by h
FE
as follows.
2. Pulse test
D
E
Cob
3.2
3.2
pF
250 to 500
400 to 800
See characteristic curves of 2SA1190 and 2SA1191.
相關PDF資料
PDF描述
2SA1189 Silicon PNP Epitaxial
2SA1190 Silicon PNP Epitaxial
2SA1191 Silicon PNP Epitaxial
2SA1193K Silicon PNP Epitaxial, Darlington
2SA1193 Silicon PNP Epitaxial, Darlington
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