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參數(shù)資料
| 型號(hào)： | 2SC3391 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial Planar |
| 中文描述： | 硅瑞展 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 24K |
| 代理商： | 2SC3391 |
2SC3391
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
30
V
Collector to emitter voltage
20
V
Emitter to base voltage
4
V
Collector current
20
mA
Collector power dissipation
200
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
—
—
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
20
—
—
V
I
C
= 1 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
4
—
—
V
I
E
= 10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
h
FE
*
1
V
BE
V
CE(sat)
—
—
0.5
μ
A
V
CB
= 10 V, I
E
= 0
V
CE
= 6 V, I
C
= 1 mA
V
CE
= 6 V, I
C
= 1 mA
I
C
= 20 mA, I
B
= 4 mA
DC current transfer ratio
60
—
200
Base to emitter voltage
—
0.72
—
V
Collector to emitter saturation
voltage
—
0.17
—
V
Gain bandwidth product
f
T
Cob
450
940
—
MHz
V
CE
= 6 V, I
C
= 5 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
V
= 6 V, I
C
= 1 mA,
f = 100 MHz
Collector output capacitance
—
0.9
1.2
pF
Power gain
PG
17
20
—
dB
Noise figure
NF
—
3.5
5.5
dB
V
CE
= 6 V, I
= 1 mA,
R
g
= 50
, f = 100 MHz
Note:
B
1. The 2SC3391 is grouped by h
FE
as follows.
C
60 to 120
100 to 200
See characteristic curves of 2SC535.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC3391B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | SPAK |
| 2SC3391C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | SPAK |
| 2SC3392 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:NPN Epitaxial Planar Silicon Transistors |
| 2SC3392-4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | SOT-23 |
| 2SC3392-5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | SOT-23 |
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