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參數(shù)資料
| 型號： | 2SC3390 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial(小信號晶體管) |
| 中文描述： | npn型硅外延（小信號晶體管） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 24K |
| 代理商： | 2SC3390 |
2SC3390
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
55
V
Collector to emitter voltage
50
V
Emitter to base voltage
5
V
Collector current
100
mA
Collector power dissipation
300
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
55
—
—
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
50
—
—
V
I
C
= 1 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
5
—
—
V
I
E
= 10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
I
EBO
h
FE
*
1
V
BE
V
CE(sat)
—
—
0.5
μ
A
μ
A
V
CB
= 18 V, I
E
= 0
V
EB
= 2 V, I
C
= 0
V
CE
= 12 V, I
C
= 2 mA
V
CE
= 12 V, I
C
= 2 mA
I
C
= 10 mA, I
B
= 1 mA
Emitter cutoff current
—
—
0.5
DC current transfer ratio
100
—
320
Base to emitter voltage
—
—
0.75
V
Collector to emitter saturation
voltage
—
—
0.2
V
Gain bandwidth product
f
T
Cob
—
200
—
MHz
V
CE
= 12 V, I
C
= 2 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
V
CE
= 6 V, I
= 0.1 mA,
R
g
= 1 k
, f = 1 kHz
Collector output capacitance
—
—
3.5
pF
Noise figure
NF
—
1.0
5.0
dB
Note:
B
1. The 2SC3390 is grouped by h
FE
as follows.
C
100 to 200
160 to 320
See characteristic curves of 2SC458(LG).
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC3390B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 100MA I(C) | SPAKVAR |
| 2SC3390C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 100MA I(C) | SPAKVAR |
| 2SC3391 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon NPN Epitaxial Planar |
| 2SC3391B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | SPAK |
| 2SC3391C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | SPAK |
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