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參數(shù)資料
| 型號： | 2SC3365-E |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-3P, 3 PIN |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 154K |
| 代理商： | 2SC3365-E |
2SC3365
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
500
V
Collector to emitter voltage
V
CEO
400
V
Emitter to base voltage
V
EBO
10
V
Collector current
I
C
10
A
Collector peak current
I
C(peak)
20
A
Base current
I
B
5A
Collector power dissipation
P
C*
1
80
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at T
C = 25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter sustain
V
CEO(sus)
400
—
V
I
C = 0.2 A, RBE = ∞, L = 100 mH
voltage
V
CEX(sus)
400
—
V
I
C = 10 A, IB1 = 2 A, IB2 = –0.6 A,
V
BE = –5.0 V, L = 180 H,
Clamped
Emitter to base breakdown
voltage
V
(BR)EBO
10
—
V
I
E = 10 mA, IC = 0
Collector cutoff current
I
CBO
——
50
AV
CB = 400 V, IE = 0
I
CEO
——
50
AV
CE = 350 V, RBE = ∞
DC current transfer ratio
h
FE1
12
—
V
CE = 5.0 V, IC = 5 A*
1
h
FE2
5—
—
V
CE = 5.0 V, IC = 10 A*
1
Collector to emitter saturation
voltage
V
CE(sat)
—
1.0
V
I
C = 5 A, IB = 1 A*
1
Base to emitter saturation
voltage
V
BE(sat)
—
1.5
V
Turn on time
t
on
—
1.0
sI
C = 10 A, IB1 = –IB2 = 2 A,
Storage time
t
stg
—
2.5
sV
CC 150 V
Fall time
t
f
—
1.0
s
Note:
1. Pulse test
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| 2SC3365-E | 10 A, 400 V, NPN, Si, POWER TRANSISTOR |
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|---|---|
| 2SC3369 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:Si NPN Epitaxial Planar |
| 2SC3371 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistor |
| 2SC3374 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANS. SC-5920V .02A .15W ECB SURFACE MT3 |
| 2SC3376 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANSISTORSC-65900V 3A 60W BCE |
| 2SC3377 | 制造商:ROHM 制造商全稱:Rohm 功能描述:2SC2673 |
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