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參數(shù)資料
| 型號： | 2SC3357-T1-A |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | POWER, MINIMOLD PACKAGE-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 86K |
| 代理商： | 2SC3357-T1-A |
Data Sheet PU10211EJ01V0DS
2
2SC3357
THERMAL RESISTANCE
Parameter
Symbol
Value
Unit
Junction to Ambient Resistance
Rth (j-a)
Note
62.5
°C/W
Note Mounted on 16 cm
2
× 0.7 mm (t) ceramic substrate
ELECTRICAL CHARACTERISTICS (TA = +25
°°°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 10 V, IE = 0 mA
–
1.0
A
Emitter Cut-off Current
IEBO
VEB = 1.0 V, IC = 0 mA
–
1.0
A
DC Current Gain
hFE
Note 1
VCE = 10 V, IC = 20 mA
50
120
250
–
RF Characteristics
Gain Bandwidth Product
fT
VCE = 10 V, IC = 20 mA
–
6.5
–
GHz
Insertion Power Gain
S21e2 VCE = 10 V, IC = 20 mA, f = 1 GHz
–
9.0
–
dB
Noise Figure (1)
NF
VCE = 10 V, IC = 7 mA, f = 1 GHz
–
1.1
–
dB
Noise Figure (2)
NF
VCE = 10 V, IC = 40 mA, f = 1 GHz
–
1.8
3.0
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 10 V, IE = 0 mA, f = 1 MHz
–
0.65
1.0
pF
Notes 1. Pulse measurement: PW
≤ 350
s, Duty Cycle ≤ 2%
2. The emitter terminal and the case shall be connected to the guard terminal of the three-terminal
capacitance bridge.
hFE CLASSIFICATION
Rank
RH
RF
RE
Marking
RH
RF
RE
hFE Value
50 to 100
80 to 160
125 to 250
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| 2SC3357-T1-A | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3357-RE-A | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3357-RF-A | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3380ASUL | 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC3380AS | 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC3357-T1-A-RE | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC3357-T1-A-RF | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC3357-T1-RF-A | 功能描述:SAME AS NE85634 NPN SILICON MEDI 制造商:cel 系列:- 包裝:帶卷（TR） 零件狀態(tài):新產(chǎn)品 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:12V 頻率 - 躍遷:6.5GHz 噪聲系數(shù)（dB，不同 f 時的典型值）:1.8dB @ 1GHz 增益:10dB 功率 - 最大值:1.2W 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:50 @ 20mA，10V 電流 - 集電極（Ic）（最大值）:100mA 安裝類型:表面貼裝 封裝/外殼:TO-243AA 供應(yīng)商器件封裝:SOT-89 標(biāo)準(zhǔn)包裝:1,000 |
| 2SC3357-T2 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
| 2SC3357-TI | 制造商:UNKNOWN 功能描述:2SC3357-TI |
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