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參數(shù)資料
| 型號： | 2SC3356 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | MINIMOLD PACKAGE-3 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 767K |
| 代理商： | 2SC3356 |
NPN SILICON RF TRANSISTOR
NE85633 / 2SC3356
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR MICROWAVE LOW-NOISE AMPLIFICATION
3-PIN MINIMOLD
Document No. PU10209EJ02V0DS (2nd edition)
Date Published June 2004 CP(K)
The mark shows major revised points.
FEATURES
Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
NE85633-A
2SC3356
50 pcs (Non reel)
8 mm wide embossed taping
NE85633-T1B-A
2SC3356-T1B
3 kpcs/reel
Pin 3 (Collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
100
mA
Total Power Dissipation
Ptot
Note
200
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
65 to +150
C
Note Free air
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC3357-RF | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3357-RH | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3357 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3357-T1RE | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3357-T1RF | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC3356(M)-T1B | 制造商: 功能描述:2SC3356(M)-T1B |
| 2SC3356(NE85633) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC3356_09 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER |
| 2SC3356_11 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER |
| 2SC3356-A | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:NPN Silicon RF Transistor |
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