- 您現(xiàn)在的位置：買(mǎi)賣IC網(wǎng) > PDF目錄33370 > 2SC3356-T1R23-A UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SC3356-T1R23-A |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | MINIMOLD PACKAGE-3 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 83K |
| 代理商： | 2SC3356-T1R23-A |
Data Sheet PU10209EJ01V0DS
3
2SC3356
TYPICAL CHARACTERISTICS (TA = +25
°°°°C, unless otherwise specified)
DC
Current
Gain
h
FE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
50
100
10
20
15
10
0.5
50
VCE = 10 V
250
200
150
100
50
0
25
50
75
100
125
150
Total
Power
Dissipation
P
tot
(mW)
Ambient Temperature TA (C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Free air
Reverse
Transfer
Capacitance
C
re
(pF)
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
2
1
0.5
0.3
0.5
0.2
1
2
5
10
30
20
f = 1 MHz
VCE = 10 V
Gain
Bandwidth
Product
f
T
(GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
2
5
0.2
0.5
1
0.1
1
5
10
50
0.1
0.5
100
VCE = 10 V
f = 1 GHz
Collector Current IC (mA)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
15
10
0
5
0.5
1
10
50
570
VCE = 10 V
IC = 20 mA
Frequency f (GHz)
INSERTION POWER GAIN, MAG
vs. FREQUENCY
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
25
15
20
5
10
0
0.05
0.1
0.5
1
0.2
2
MAG
|S21e|
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC3356-T1S | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3356-R | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3356-T1R25-A | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3356-T1 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3356-R23 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC3356-T2B | 制造商:NEC Electronics Corporation 功能描述: 制造商:NEC Electronics Corporation 功能描述:UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3356W | 制造商:BILIN 制造商全稱:Galaxy Semi-Conductor Holdings Limited 功能描述:Silicon Epitaxial Planar Transistor |
| 2SC3356-X-AE3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER |
| 2SC3357 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD |
| 2SC3357(NE85634) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。