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參數資料
| 型號： | 2SC3355 |
| 廠商： | NEC Corp. |
| 英文描述： | High Frequency Low Noise Amplifier NPN Transistor(高頻低噪聲放大器NPN晶體管) |
| 中文描述： | 高頻低噪聲放大器NPN晶體管（高頻低噪聲放大器npn型晶體管） |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 90K |
| 代理商： | 2SC3355 |
DATA SHEET
SILICON TRANSISTOR
2SC3355
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
Document No. P10355EJ3V1DS00 (3rd edition)
Date Published March 1997 N
Printed in Japan
1985
DESCRIPTION
The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise
amplifier at VHF, UHF and CATV band.
It has lange dynamic range and good current characteristic.
FEATURES
Low Noise and High Gain
NF = 1.1 dB TYP., G
a
= 8.0 dB TYP. @V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
NF = 1.1 dB TYP., G
a
= 9.0 dB TYP. @V
CE
= 10 V, I
C
= 40 mA, f = 1.0 GHz
High Power Gain
MAG = 11 dB TYP. @V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
20
12
3.0
100
600
150
V
V
V
mA
mW
C
C
65 to +150
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
1.0
A
V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current
I
EBO
1.0
A
V
EB
= 1.0 V, I
C
= 0
DC Current Gain
h
FE
50
120
300
V
CE
= 10 V, I
C
= 20 mA
Gain Bandwidth Product
f
T
6.5
GHz
V
CE
= 10 V, I
C
= 20 mA
Output Capacitance
C
ob
0.65
1.0
pF
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Insertion Power Gain
S
21e
2
9.5
dB
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
Noise Figure
NF
1.1
dB
V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
Noise Figure
NF
1.8
3.0
dB
V
CE
= 10 V, I
C
= 40 mA, f = 1.0 GHz
h
FE
Classification
Class
K
Marking
K
h
FE
50 to 300
PACKAGE DIMENSIONS
in millimeters (inches)
5.2 MAX.
(0.204 MAX.)
0.5
(0.02)
2.54
(0.1)
1.
2.
3.
Base
Emitter
Collector
EIAJ
JEDEC
IEC
: SC-43B
: TO-92
: PA33
1.27
(0.05)
5
(
4
(
1
(
1
(
1
2
3
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC3356Q | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 2SC3356R | TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SOT-346 |
| 2SC3356R23 | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 2SC3356R24 | TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SOT-346 |
| 2SC3356R25 | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC3355(NE85632) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC3355_11 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER |
| 2SC3355-A-K | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC3355G-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER |
| 2SC3355G-T92-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER |
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